Invention Grant
- Patent Title: Semiconductor package and method of fabricating the same
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Application No.: US15434599Application Date: 2017-02-16
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Publication No.: US09899308B2Publication Date: 2018-02-20
- Inventor: Wen-Tsung Tseng , Yi-Che Lai , Shih-Kuang Chiu , Mao-Hua Yeh
- Applicant: Siliconware Precision Industries Co., Ltd.
- Applicant Address: TW Taichung
- Assignee: Siliconware Precision Industries Co., Ltd.
- Current Assignee: Siliconware Precision Industries Co., Ltd.
- Current Assignee Address: TW Taichung
- Agency: Mintz Levin Cohn Ferris Glovsky and Popeo, P.C.
- Agent Peter F. Corless; Steven M. Jensen
- Priority: TW102132379A 20130909
- Main IPC: H01L21/48
- IPC: H01L21/48 ; H01L23/13 ; H01L23/14 ; H01L23/373 ; H01L23/498

Abstract:
A semiconductor package is provided, including a semiconductor substrate having a plurality of conductive vias, a buffer layer formed on the semiconductor substrate, a plurality of conductive pads formed on end surfaces of the conductive vias and covering the buffer layer. During a reflow process, the buffer layer greatly reduces the thermal stress, thereby eliminating the occurrence of cracking at the interface of conductive pads. A method of fabricating such a semiconductor package is also provided.
Public/Granted literature
- US20170229387A1 SEMICONDUCTOR PACKAGE AND METHOD OF FABRICATING THE SAME Public/Granted day:2017-08-10
Information query
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