A semiconductor device with a semiconductor-on-insulator (SOI) structure is provided including an insulating layer and a semiconductor layer formed on the insulating layer and a fuse. The fuse includes a first at least partially silicided raised semiconductor region with a first silicided portion and, adjacent to the first at least partially silicided raised semiconductor region, a second at least partially silicided raised semiconductor region with a second silicided portion. The second silicided portion is formed in direct physical contact with the first silicided portion.