- 专利标题： Forming on-chip metal-insulator-semiconductor capacitor
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申请号： US15339164申请日： 2016-10-31
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公开(公告)号： US09899372B1公开(公告)日： 2018-02-20
- 发明人: Zhenxing Bi , Kangguo Cheng , Peng Xu , Chen Zhang
- 申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Tutunjian & Bitetto, P.C.
- 代理商 Vazken Alexanian
- 主分类号： H01L27/06
- IPC分类号： H01L27/06 ; H01L21/8234 ; H01L49/02 ; H01L21/3213 ; H01L21/308 ; H01L21/762
摘要：
A method is presented for forming a semiconductor structure. The method includes forming a plurality of fins on a first region of the semiconductor substrate, forming a bi-polymer structure, selectively removing the first polymer of the bi-polymer structure and forming deep trenches in the semiconductor substrate resulting in pillars in a second region of the semiconductor structure. The method further includes selectively removing the second polymer of the bi-polymer structure, doping the pillars, and depositing a high-k metal gate (HKMG) over the first and second regions to form the MIS capacitor in the second region of the semiconductor substrate.
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