Invention Grant
- Patent Title: Method for fabricating semiconductor device
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Application No.: US14978409Application Date: 2015-12-22
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Publication No.: US09899520B2Publication Date: 2018-02-20
- Inventor: Yi-Liang Ye , Kuang-Hsiu Chen , Chueh-Yang Liu , Yu-Ren Wang
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsinchu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsinchu
- Agency: WPAT, PC
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/66 ; H01L21/02 ; H01L21/033

Abstract:
A method for forming a semiconductor device includes steps as follows: Firstly, a semiconductor substrate having a circuit element with at least one spacer formed thereon is provided. Next, an acid treatment is performed on a surface of the spacer. A disposable layer is then formed on the circuit element and the spacer. Thereafter, an etching process is performed to form at least one recess in the semiconductor substrate adjacent to the circuit element. Subsequently, a selective epitaxial growth (SEG) process is performed to form an epitaxial layer in the recess.
Public/Granted literature
- US20170179286A1 METHOD FOR FABRICATING SEMICONDUCTOR DEVICE Public/Granted day:2017-06-22
Information query
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