- 专利标题： Semiconductor structure
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申请号： US14594159申请日： 2015-01-11
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公开(公告)号： US09899523B2公开(公告)日： 2018-02-20
- 发明人: Wen-Jiun Shen , Chia-Jong Liu , Chung-Fu Chang , Yen-Liang Wu , Man-Ling Lu , Yi-Wei Chen , Jhen-Cyuan Li
- 申请人： UNITED MICROELECTRONICS CORP.
- 申请人地址： TW Hsin-Chu
- 专利权人： UNITED MICROELECTRONICS CORP.
- 当前专利权人： UNITED MICROELECTRONICS CORP.
- 当前专利权人地址： TW Hsin-Chu
- 代理商 Winston Hsu
- 优先权： TW103142049A 20141203
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L29/66
摘要：
The present invention provides a semiconductor structure, comprising a substrate, a gate structure, a source/drain region and at least a dislocation. The gate structure is disposed on the substrate. The source/drain region is disposed in the substrate at two sides of the gate structure. The dislocation is located in the source/drain region, and is asymmetrical relating to a middle axis of the source/drain region.
公开/授权文献
- US20160163797A1 Semiconductor Structure 公开/授权日：2016-06-09
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