Invention Grant
- Patent Title: On-chip electromagnetic bandgap (EBG) structure for noise suppression
-
Application No.: US14948477Application Date: 2015-11-23
-
Publication No.: US09899982B2Publication Date: 2018-02-20
- Inventor: Ming Hsien Tsai , Chien-Min Lin , Fu-Lung Hsueh , Han-Ping Pu , Sa-Lly Liu , Sen-Kuei Hsu
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Eschweiler & Potashnik, LLC
- Main IPC: H01L29/93
- IPC: H01L29/93 ; H01L23/528 ; H01L23/522 ; H03H1/00 ; H03H7/01

Abstract:
An integrated circuit (IC) die for electromagnetic band gap (EBG) noise suppression is provided. A power mesh and a ground mesh are stacked within a back end of line (BEOL) region overlying a semiconductor substrate, and an inductor is arranged over the power and ground meshes. The inductor comprises a plurality of inductor segments stacked upon one another and connected end to end to define a length of the inductor. A capacitor underlies the power and ground meshes, and is connected in series with the inductor. Respective terminals of the capacitor and the inductor are respectively coupled to the power and ground meshes. A method for manufacturing the IC die is also provided.
Public/Granted literature
- US20170149404A1 ON-CHIP ELECTROMAGNETIC BANDGAP (EBG) STRUCTURE FOR NOISE SUPPRESSION Public/Granted day:2017-05-25
Information query
IPC分类: