- 专利标题: Metrology method and apparatus
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申请号: US14945257申请日: 2015-11-18
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公开(公告)号: US09903823B2公开(公告)日: 2018-02-27
- 发明人: Yen-Wen Lu , Jay Jianhui Chen , Wei Liu , Boris Menchtchikov , Jen-Shiang Wang , Te-Chih Huang
- 申请人: ASML NETHERLANDS B.V.
- 申请人地址: NL Veldhoven
- 专利权人: ASML NETHERLANDS B.V.
- 当前专利权人: ASML NETHERLANDS B.V.
- 当前专利权人地址: NL Veldhoven
- 代理机构: Pillsbury Winthrop Shaw Pittman LLP
- 主分类号: G01N21/88
- IPC分类号: G01N21/88 ; G01B11/27 ; G03F7/20 ; G01N21/95
摘要:
A method to determine an overlay error between a first structure and a second structure, wherein the first structure and second structures are on different layers on a substrate and are imaged onto the substrate by a lithographic process, the method comprising: obtaining an apparent overlay error; obtaining a systematic error caused by a factor other than misalignment of the first and second structures; and determining the overlay error by removing the systematic error from the apparent overlay error. The method may alternatively comprise obtaining apparent characteristics of diffraction orders of diffraction by an overlapping portion of the first and second structures; obtaining corrected characteristics of the diffraction orders; determining the overlay error from the corrected characteristics; and adjusting a characteristic of the lithographic process based on the overlay error.
公开/授权文献
- US20160146740A1 METROLOGY METHOD AND APPARATUS 公开/授权日:2016-05-26
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