A dynamic random access memory (DRAM) device includes a memory cell array including a plurality of memory cells, a refresh controller configured to perform a plurality of refresh operations on the plurality of memory cells in response to a plurality of refresh commands from an external device, and a refresh counter configured to count a number of the refresh commands for a fixed period of time and compare the counted number with a threshold. The refresh counter is configured to generate a power failure signal to cause the DRAM device to enter a power failure mode in response to the comparison of the counted number with the threshold. The refresh controller is configured to perform a refresh operation on the plurality of memory cells without control of the external device in the power failure mode.