Invention Grant
- Patent Title: Reactive sputtering apparatus
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Application No.: US14676031Application Date: 2015-04-01
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Publication No.: US09905401B2Publication Date: 2018-02-27
- Inventor: Nobuo Yamaguchi , Kazuaki Matsuo , Susumu Akiyama , Satoshi Uchino , Yoshimitsu Shimane
- Applicant: CANON ANELVA CORPORATION
- Applicant Address: JP Kawasaki-Shi
- Assignee: CANON ANELVA CORPORATION
- Current Assignee: CANON ANELVA CORPORATION
- Current Assignee Address: JP Kawasaki-Shi
- Agency: Fitzpatrick, Cella, Harper & Scinto
- Priority: JP2010-284944 20101221
- Main IPC: C23C14/00
- IPC: C23C14/00 ; H01J37/32 ; H01J37/34

Abstract:
A reactive sputtering apparatus includes a chamber, a substrate holder provided in the chamber, a target holder which is provided in the chamber and configured to hold a target, a deposition shield plate which is provided in the chamber so as to form a sputtering space between the target holder and the substrate holder, and prevents a sputter particle from adhering to an inner wall of the chamber, a reactive gas introduction pipe configured to introduce a reactive gas into the sputtering space, an inert gas introduction port which introduces an inert gas into a space that falls outside the sputtering space and within the chamber, and a shielding member which prevents a sputter particle from the target mounted on the target holder from adhering to an introduction port of the reactive gas introduction pipe upon sputtering.
Public/Granted literature
- US20150206714A1 REACTIVE SPUTTERING APPARATUS Public/Granted day:2015-07-23
Information query
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