公开(公告)号：US09905441B2

公开(公告)日：2018-02-27

申请号：US14742067

申请日：2015-06-17

Applicant: CANON ANELVA CORPORATION

Inventor： Yoshimitsu Shimane ,  Takuya Seino

IPC: H01L43/12 ,  H01L21/67 ,  C23C16/458 ,  C23C16/455 ,  C23C16/46 ,  C23C8/10 ,  C23C14/16 ,  C23C14/58

CPC classification number: H01L21/67109 ,  C23C8/10 ,  C23C14/16 ,  C23C14/5853 ,  C23C16/45565 ,  C23C16/458 ,  C23C16/46 ,  H01L43/12

Abstract: An oxidation process apparatus according to one embodiment of the present invention includes: a substrate holder provided in a processing chamber and having a substrate holding surface; a gas introduction unit for introducing an oxygen gas; a cylindrical member; and a substrate holder drive unit for changing relative positions of the substrate holder and the cylindrical member to allow the substrate holding surface and the cylindrical member to form an oxidation process space. The cylindrical member is provided so as to form a gap between the cylindrical member and the substrate holder during formation of the space. The oxygen gas is introduced restrictively into the space. The oxygen gas introduced from the gas introduction unit is evacuated through the gap.

公开(公告)号：US09865805B2

公开(公告)日：2018-01-09

申请号：US14742169

申请日：2015-06-17

Applicant: CANON ANELVA CORPORATION

Inventor： Takuya Seino ,  Kazumasa Nishimura ,  Hiroki Okuyama ,  Yuichi Otani ,  Yuta Murooka ,  Yoshimitsu Shimane

IPC: H01L21/00 ,  H01L43/12 ,  H01L43/08 ,  H01L43/10 ,  H01L21/02 ,  H01L37/00 ,  H01L41/20 ,  H01L21/28

CPC classification number: H01L43/12 ,  H01L21/02104 ,  H01L21/02205 ,  H01L21/0226 ,  H01L21/02263 ,  H01L21/02271 ,  H01L21/02436 ,  H01L21/28061 ,  H01L37/00 ,  H01L41/20 ,  H01L43/08 ,  H01L43/10

Abstract: Provided is a method for manufacturing a magnetoresistive element, including a step of forming a tunnel barrier layer, wherein the step of forming the tunnel barrier layer includes a deposition step of depositing a metal film on top of a substrate, and an oxidation step of subjecting the metal film to an oxidation process. The oxidation step includes holding the substrate having Mg formed thereon, on a substrate holder in a processing container in which the oxidation process is performed, supplying an oxygen gas to the substrate by introducing the oxygen gas into the processing container, at a temperature at which Mg does not sublime, and heating the substrate after the introduction of the oxygen gas.

公开(公告)号：US09779921B2

公开(公告)日：2017-10-03

申请号：US14750717

申请日：2015-06-25

Applicant: CANON ANELVA CORPORATION

Inventor： Yoshimitsu Shimane ,  Satoshi Uchino ,  Susumu Akiyama ,  Kazuaki Matsuo ,  Nobuo Yamaguchi

IPC: C23C14/34 ,  H01J37/34 ,  H01J37/32

CPC classification number: H01J37/3441 ,  C23C14/34 ,  H01J37/32477 ,  H01J37/32715 ,  H01J37/32733 ,  H01J37/3405 ,  H01J37/347

Abstract: An apparatus includes a process chamber, a substrate holder arranged in the process chamber, a first shield provided on the peripheral portion of the substrate holder, and a second shield provided inside the process chamber. The internal space of the process chamber is partitioned into an outer space and a process space to process the substrate, by at least the first shield, the second shield, and the substrate holder. The substrate holder can be driven along a driving direction perpendicular to a substrate holding surface. The length, in a direction parallel to the driving direction, of a minimum gap portion having a minimum size in a direction perpendicular to the driving direction between the first and second shields does not change even if the substrate holder is driven in the driving direction.

公开(公告)号：US09905401B2

公开(公告)日：2018-02-27

申请号：US14676031

申请日：2015-04-01

Applicant: CANON ANELVA CORPORATION

Inventor： Nobuo Yamaguchi ,  Kazuaki Matsuo ,  Susumu Akiyama ,  Satoshi Uchino ,  Yoshimitsu Shimane

IPC: C23C14/00 ,  H01J37/32 ,  H01J37/34

CPC classification number: H01J37/3244 ,  C23C14/0063 ,  C23C14/0068 ,  H01J37/3405 ,  H01J37/3411 ,  H01J37/3441 ,  H01J37/3447 ,  H01J2237/3328

Abstract: A reactive sputtering apparatus includes a chamber, a substrate holder provided in the chamber, a target holder which is provided in the chamber and configured to hold a target, a deposition shield plate which is provided in the chamber so as to form a sputtering space between the target holder and the substrate holder, and prevents a sputter particle from adhering to an inner wall of the chamber, a reactive gas introduction pipe configured to introduce a reactive gas into the sputtering space, an inert gas introduction port which introduces an inert gas into a space that falls outside the sputtering space and within the chamber, and a shielding member which prevents a sputter particle from the target mounted on the target holder from adhering to an introduction port of the reactive gas introduction pipe upon sputtering.

公开(公告)号：US20160005958A1

公开(公告)日：2016-01-07

申请号：US14742169

申请日：2015-06-17

Applicant: CANON ANELVA CORPORATION

Inventor： Takuya Seino ,  Kazumasa Nishimura ,  Hiroki Okuyama ,  Yuichi Otani ,  Yuta Murooka ,  Yoshimitsu Shimane

IPC: H01L43/12 ,  H01L43/10 ,  H01L43/08

CPC classification number: H01L43/12 ,  H01L21/02104 ,  H01L21/02205 ,  H01L21/0226 ,  H01L21/02263 ,  H01L21/02271 ,  H01L21/02436 ,  H01L21/28061 ,  H01L37/00 ,  H01L41/20 ,  H01L43/08 ,  H01L43/10

Abstract: Provided is a method for manufacturing a magnetoresistive element, including a step of forming a tunnel barrier layer, wherein the step of forming the tunnel barrier layer includes a deposition step of depositing a metal film on top of a substrate, and an oxidation step of subjecting the metal film to an oxidation process. The oxidation step includes holding the substrate having Mg formed thereon, on a substrate holder in a processing container in which the oxidation process is performed, supplying an oxygen gas to the substrate by introducing the oxygen gas into the processing container, at a temperature at which Mg does not sublime, and heating the substrate after the introduction of the oxygen gas.

Abstract translation: 提供了一种制造磁阻元件的方法，包括形成隧道势垒层的步骤，其中形成隧道势垒层的步骤包括沉积步骤，在衬底的顶部上沉积金属膜，以及氧化步骤， 金属膜进行氧化处理。 氧化步骤包括将其上形成有Mg的衬底保持在进行氧化处理的处理容器中的衬底保持器上，通过将氧气引入到处理容器中，将氧气供给到衬底中， Mg不升华，在引入氧气之后加热基板。

公开(公告)号：US20150318466A1

公开(公告)日：2015-11-05

申请号：US14742067

申请日：2015-06-17

Applicant: CANON ANELVA CORPORATION

Inventor： Yoshimitsu Shimane ,  Takuya Seino

IPC: H01L43/12 ,  C23C16/455 ,  C23C16/46 ,  C23C16/458

CPC classification number: H01L21/67109 ,  C23C8/10 ,  C23C14/16 ,  C23C14/5853 ,  C23C16/45565 ,  C23C16/458 ,  C23C16/46 ,  H01L43/12

Abstract: An oxidation process apparatus according to one embodiment of the present invention includes: a substrate holder provided in a processing chamber and having a substrate holding surface; a gas introduction unit for introducing an oxygen gas; a cylindrical member; and a substrate holder drive unit for changing relative positions of the substrate holder and the cylindrical member to allow the substrate holding surface and the cylindrical member to form an oxidation process space. The cylindrical member is provided so as to form a gap between the cylindrical member and the substrate holder during formation of the space. The oxygen gas is introduced restrictively into the space. The oxygen gas introduced from the gas introduction unit is evacuated through the gap.

Abstract translation: 根据本发明的一个实施方案的氧化处理装置包括：设置在处理室中并具有基板保持表面的基板保持器; 用于引入氧气的气体引入单元; 圆柱形构件; 以及基板保持器驱动单元，用于改变基板保持件和圆筒形构件的相对位置，以允许基板保持表面和圆柱形构件形成氧化处理空间。 圆柱形构件设置成在形成空间期间在圆柱形构件和衬底保持器之间形成间隙。 氧气被限制地引入到空间中。 从气体引入单元引入的氧气通过该间隙排出。