-
公开(公告)号：US12080509B2
公开(公告)日：2024-09-03
申请号：US18616914
申请日：2024-03-26
Applicant: CANON ANELVA CORPORATION
Inventor： Yoichi Ando
CPC classification number: H01J35/30 , H01J35/153 , H05G1/32
Abstract: An X-ray generating apparatus includes an X-ray generating tube including an electron gun and a target configured to generate X-rays upon receiving an electron beam emitted from the electron gun, a deflector configured to deflect the electron beam, a driving circuit configured to apply an accelerating voltage between a cathode of the electron gun and the target, and an adjuster configured to adjust deflection of the electron beam by the deflector in accordance with the accelerating voltage or an amount of change in the accelerating voltage so as to reduce a change in incident position of the electron beam onto the target due to a change in the accelerating voltage.
-
公开(公告)号：US11823860B1
公开(公告)日：2023-11-21
申请号：US18350953
申请日：2023-07-12
Applicant: CANON ANELVA CORPORATION
Inventor： Yoichi Ando
CPC classification number: H01J35/08 , H01J35/153 , H01J2235/085
Abstract: An X-ray generating apparatus includes an electron gun, a target configured to generate X-rays by being irradiated with an electron beam emitted from the electron gun, and a controller configured to control a first mode for thinning the target by irradiating the target with an electron beam with a current adjusted within a first current range and a second mode for generating X-rays by irradiating the target with an electron beam with a current adjusted within a second current range. The first current range has a lower limit larger than an upper limit of the second current range.
-
公开(公告)号：US11810748B2
公开(公告)日：2023-11-07
申请号：US18155177
申请日：2023-01-17
Applicant: CANON ANELVA CORPORATION
Inventor： Tsutomu Hiroishi , Reiji Sakamoto , Hiroshi Yakushiji
IPC: H01J37/08 , H01J37/305
CPC classification number: H01J37/08 , H01J37/3053 , H01J2237/022 , H01J2237/152
Abstract: An ion gun according to one embodiment of the present invention has an anode, a cathode having a first portion and a second portion that face the anode, and a magnet that creates a spatial magnetic field between the first portion and the second portion. An annular gap including a curved portion is provided between the first portion and the second portion of the cathode. The magnet creates lines of magnetic field having the bottom inside with respect to the sectional center line of the gap between the first portion and the second portion of the curved portion.
-
4.发明公开公开(公告)号：US20230352260A1
公开(公告)日：2023-11-02
申请号：US18350953
申请日：2023-07-12
Applicant: CANON ANELVA CORPORATION
Inventor： Yoichi ANDO
CPC classification number: H01J35/08 , H01J35/153 , H01J2235/085
Abstract: An X-ray generating apparatus includes an electron gun, a target configured to generate X-rays by being irradiated with an electron beam emitted from the electron gun, and a controller configured to control a first mode for thinning the target by irradiating the target with an electron beam with a current adjusted within a first current range and a second mode for generating X-rays by irradiating the target with an electron beam with a current adjusted within a second current range. The first current range has a lower limit larger than an upper limit of the second current range.
-
公开(公告)号：US20230083722A1
公开(公告)日：2023-03-16
申请号：US18046662
申请日：2022-10-14
Applicant: TOHOKU UNIVERSITY , Canon Anelva Corporation
Inventor： Takehito SHIMATSU , Miyuki UOMOTO , Kazuo MIYAMOTO , Yoshikazu MIYAMOTO , Nobuhiko KATOH , Takayuki MORIWAKI , Takayuki SAITOH
Abstract: Atomic diffusion bonding is carried out using a bonding film comprising a nitride formed at a bonding surface. Operating in a vacuum chamber, a bonding film comprising a nitride is formed on each of flat surfaces of two substrates that each have the flat surface, and, by overlapping the two substrates so the bonding films formed on the two substrates are in contact with each other, the two substrates are joined by the generation of atomic diffusion at a bonding interface between the bonding films.
-
Patent Agency Ranking
公开(公告)号：US11600469B2
公开(公告)日：2023-03-07
申请号：US16720156
申请日：2019-12-19
Applicant: Canon Anelva Corporation
Inventor： Atsushi Takeda , Takayuki Moriwaki , Tadashi Inoue , Masaharu Tanabe , Kazunari Sekiya , Hiroshi Sasamoto , Tatsunori Sato , Nobuaki Tsuchiya
Abstract: A plasma processing apparatus includes a balun having a first unbalanced terminal, a second unbalanced terminal, a first balanced terminal, and a second balanced terminal, a grounded vacuum container, a first electrode electrically connected to the first balanced terminal, a second electrode electrically connected to the second balanced terminal, and a ground electrode arranged in the vacuum container and grounded.
-
公开(公告)号：US11600466B2
公开(公告)日：2023-03-07
申请号：US17023675
申请日：2020-09-17
Applicant: Canon Anelva Corporation
Inventor： Masaharu Tanabe , Kazunari Sekiya , Tadashi Inoue , Hiroshi Sasamoto , Tatsunori Sato , Nobuaki Tsuchiya , Atsushi Takeda
Abstract: A plasma processing apparatus includes an impedance matching circuit, a balun having a first unbalanced terminal connected to the impedance matching circuit, a grounded second unbalanced terminal, a first balanced terminal and a second balanced terminal, a grounded vacuum container, a first electrode electrically connected to the first balanced terminal, a second electrode electrically connected to the second balanced terminal, an adjustment reactance configured to affect a relationship between a first voltage applied to the first electrode and a second voltage applied to the second electrode, a high-frequency power supply configured to supply a high frequency between the first unbalanced terminal and the second unbalanced terminal via the impedance matching circuit, and a controller configured to control an impedance of the impedance matching circuit and a reactance of the adjustment reactance.
-
公开(公告)号：US11335541B2
公开(公告)日：2022-05-17
申请号：US17023675
申请日：2020-09-17
Applicant: Canon Anelva Corporation
Inventor： Masaharu Tanabe , Kazunari Sekiya , Tadashi Inoue , Hiroshi Sasamoto , Tatsunori Sato , Nobuaki Tsuchiya , Atsushi Takeda
Abstract: A plasma processing apparatus includes an impedance matching circuit, a balun having a first unbalanced terminal connected to the impedance matching circuit, a grounded second unbalanced terminal, a first balanced terminal and a second balanced terminal, a grounded vacuum container, a first electrode electrically connected to the first balanced terminal, a second electrode electrically connected to the second balanced terminal, an adjustment reactance configured to affect a relationship between a first voltage applied to the first electrode and a second voltage applied to the second electrode, a high-frequency power supply configured to supply a high frequency between the first unbalanced terminal and the second unbalanced terminal via the impedance matching circuit, and a controller configured to control an impedance of the impedance matching circuit and a reactance of the adjustment reactance.
-
公开(公告)号：US11289305B2
公开(公告)日：2022-03-29
申请号：US16946476
申请日：2020-06-24
Applicant: Canon Anelva Corporation
Inventor： Hiroshi Yakushiji , Yuzuru Miura , Masahiro Shibamoto
Abstract: A deposition method of arranging a discharge portion of a striker near a target to induce arc discharge and forming a film on a substrate using a plasma generated by the arc discharge is disclosed. The method includes a changing step of changing a position for inducing the arc discharge by the striker in a region set in the target, a deposition step of forming the film on the substrate using the plasma generated by inducing the arc discharge at the position, and a reduction step of reducing the region in accordance with use of the target.
-
公开(公告)号：US11244801B2
公开(公告)日：2022-02-08
申请号：US17211079
申请日：2021-03-24
Applicant: CANON ANELVA CORPORATION
Inventor： Kazuya Tsujino , Yoichi Ando
Abstract: An X-ray generation device includes a cathode including an electron source generating an electron beam, an anode including a target to transmit an X-ray generated by collision of the electron beam, and a convergence electrode converging the electron beam toward the target. The target has a first region having a locally small thickness and a second region having a larger thickness than the first region. The X-ray generation device further includes a deflection unit to switch an incident position of the electron beam between the first region and the second region. The deflection unit has an adjustment mode to adjust an X-ray focal spot diameter and an X-ray generation mode to generate an X-ray, the electron beam is caused to enter the first region in the adjustment mode, and the electron beam is caused to enter the second region in the X-ray generation mode.
-
-
-
-
-
-
-
-
-
Search Results
328
records
(took 0.021 seconds)
