- 专利标题： High boiling temperature solvent additives for semiconductor processing
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申请号： US14583514申请日： 2014-12-26
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公开(公告)号： US09905457B2公开(公告)日： 2018-02-27
- 发明人: Bo-Jiun Lin , Ching-Yu Chang , Hai-Ching Chen , Tien-I Bao
- 申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Slater Matsil, LLP
- 主分类号： H01L21/768
- IPC分类号： H01L21/768 ; H01L21/02 ; H01B3/20 ; H01L23/532
摘要：
A method for forming an interconnect structure includes forming a patterned layer over a substrate, the patterned layer having an opening therein. A dielectric material is filled in the opening. The dielectric material has a precursor and a solvent, the solvent having a boiling point temperature greater than a precursor cross-linking temperature. A thermal treatment is performed on the dielectric material to form a dielectric layer.
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