Invention Grant
- Patent Title: Integrated circuit and semiconductor device
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Application No.: US15409523Application Date: 2017-01-18
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Publication No.: US09905561B2Publication Date: 2018-02-27
- Inventor: Ha-young Kim , Sung-we Cho , Tae-joong Song , Sang-hoon Baek
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR
- Agency: Renaissance IP Law Group LLP
- Priority: KR10-2015-0049953 20150408; KR10-2015-0128566 20150910
- Main IPC: H01L23/52
- IPC: H01L23/52 ; H01L27/092 ; H01L23/522 ; H01L23/528 ; H01L27/02 ; G06F17/50

Abstract:
An embodiment includes an integrated circuit comprising a standard cell, the standard cell comprising: first and second active regions having different conductivity types and extending in a first direction; first, second, and third conductive lines extending over the first and second active regions in a second direction substantially perpendicular to the first direction, and disposed parallel to each other; and a cutting layer extending in the first direction between the first and second active regions and separating the first conductive line into a first upper conductive line and a first lower conductive line, the second conductive line into a second upper conductive line and a second lower conductive line, and the third conductive line into a third upper conductive line and a third lower conductive line; wherein: the first upper conductive line and the third lower conductive line are electrically connected together; and the second upper conductive line and the second lower conductive line are electrically connected together.
Public/Granted literature
- US20170133380A1 INTEGRATED CIRCUIT AND SEMICONDUCTOR DEVICE Public/Granted day:2017-05-11
Information query
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