Invention Grant
- Patent Title: Semiconductor device and insulating layer-forming composition
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Application No.: US15340831Application Date: 2016-11-01
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Publication No.: US09905768B2Publication Date: 2018-02-27
- Inventor: Yuzo Nagata , Hiroo Takizawa , Satoru Yamada
- Applicant: FUJIFILM Corporation
- Applicant Address: JP Tokyo
- Assignee: FUJIFILM Corporation
- Current Assignee: FUJIFILM Corporation
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- Priority: JP2014-097186 20140508
- Main IPC: H01L51/00
- IPC: H01L51/00 ; H01L51/05 ; C08F220/06 ; C08F220/18 ; C08F220/28 ; C08F220/32

Abstract:
Provided is a semiconductor device which includes a semiconductor layer and an insulating layer adjacent to the semiconductor layer, in which the insulating layer is formed of a crosslinked product of a polymer compound that has a repeating unit (IA) represented by the following Formula (IA) and a repeating unit (IB) represented by the following Formula (IB); and an insulating layer-forming composition which is used for forming an insulating layer of a semiconductor device and contains a polymer compound that has the following repeating units (IA) and (IB). In Formulae, R1a and R1b each independently represent a hydrogen atom, a halogen atom, or an alkyl group. L1a, L2a, and L1b each independently represent a single bond or a linking group. X represents a crosslinkable group and YB represents a decomposable group or a hydrogen atom. m1a and m2a each independently represent an integer of 1 to 5. The symbol “*” represents a bonding position of the repeating units.
Public/Granted literature
- US20170054076A1 SEMICONDUCTOR DEVICE AND INSULATING LAYER-FORMING COMPOSITION Public/Granted day:2017-02-23
Information query
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