Invention Grant
- Patent Title: Methods of operating buffered multi-rank memory modules configured to selectively link rank control signals
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Application No.: US15713936Application Date: 2017-09-25
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Publication No.: US09922724B2Publication Date: 2018-03-20
- Inventor: Tae-Hyung Kim , Huichong Shin , Seokil Kim , Young Yun , Jonghyoung Lim , Youkeun Han
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Ward and Smith, P.A.
- Priority: KR10-2015-0136181 20150925
- Main IPC: G11C7/10
- IPC: G11C7/10 ; G11C29/34 ; G06F3/06 ; G06F12/1009 ; G11C11/4093 ; G11C11/4076 ; G11C5/04

Abstract:
A method of operating a memory module including a plurality of semiconductor memory devices organized into a multi-rank memory on a DIMM and a memory buffer included on the DIMM, operatively coupled to the multi-rank memory, can be provided by mapping an access to the DIMM from a memory controller to semiconductor memory devices included in more than one rank within the multi-rank memory based on a mode register set signal and selectively linking rank control signals during a parallel bit test operation to the more than one rank within the multi-rank memory plurality of semiconductor memory devices.
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