Invention Grant
- Patent Title: Method of manufacturing semiconductor device
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Application No.: US15350716Application Date: 2016-11-14
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Publication No.: US09929023B2Publication Date: 2018-03-27
- Inventor: Jung-Ho Do , Jonghoon Jung , Sanghoon Baek , Seungyoung Lee , Taejoong Song , Jinyoung Lim
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2015-0162675 20151119; KR10-2016-0034831 20160323
- Main IPC: H01L21/8238
- IPC: H01L21/8238 ; H01L21/3213

Abstract:
A method of manufacturing a semiconductor device may include forming first trenches that define active patterns extending in a first direction on a substrate, forming first insulating layers filling the first trenches, forming first mask patterns extending in the first direction while having a first width along a second direction perpendicular to the first direction, forming a second mask pattern extending in the first direction while having a second width along the second direction, and forming a second trench that partly defines an active region by executing a first etching process that etches the active patterns and the first insulating layer using the first mask patterns and the second mask pattern.
Public/Granted literature
- US20170148687A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2017-05-25
Information query
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