- Patent Title: Semiconductor package of a flipped MOSFET chip and a multi-based die paddle with top surface groove-divided multiple connecting areas for connection to the flipped MOSFET electrodes
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Application No.: US13913183Application Date: 2013-06-07
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Publication No.: US09929076B2Publication Date: 2018-03-27
- Inventor: Yan Xun Xue , Yueh-Se Ho , Hamza Yilmaz , Jun Lu
- Applicant: Yan Xun Xue , Yueh-Se Ho , Hamza Yilmaz , Jun Lu
- Applicant Address: US CA Sunnyvale
- Assignee: ALPHA AND OMEGA SEMICONDUCTOR INCORPORATED
- Current Assignee: ALPHA AND OMEGA SEMICONDUCTOR INCORPORATED
- Current Assignee Address: US CA Sunnyvale
- Agent Chein-Hwa S. Tsao; Chen-Chi Lin
- Main IPC: H01L23/495
- IPC: H01L23/495 ; H01L23/48 ; H01L23/52 ; H01L23/00 ; H01L23/492

Abstract:
The invention relates to a semiconductor package of a flip chip and a method for making the semiconductor package. The semiconductor chip comprises a metal-oxide-semiconductor field effect transistor. On a die paddle including a first base, a second base and a third base, half-etching or punching is performed on the top surfaces of the first base and the second base to obtain plurality of grooves that divide the top surface of the first base into a plurality of areas comprising multiple first connecting areas, and divide the top surface of the second base into a plurality of areas comprising at least a second connecting area. The semiconductor chip is connected to the die paddle at the first connecting areas and the second connecting area.
Public/Granted literature
- US20160104661A9 A SEMICONDUCTOR PACKAGE OF A FLIPPED MOSFET Public/Granted day:2016-04-14
Information query
IPC分类: