- 专利标题： Light emitting device and electronic device
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申请号： US12651734申请日： 2010-01-04
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公开(公告)号： US09929220B2公开(公告)日： 2018-03-27
- 发明人: Shunpei Yamazaki , Masahiro Katayama , Shingo Eguchi , Yoshiaki Oikawa , Ami Nakamura , Satoshi Seo , Kaoru Hatano
- 申请人： Shunpei Yamazaki , Masahiro Katayama , Shingo Eguchi , Yoshiaki Oikawa , Ami Nakamura , Satoshi Seo , Kaoru Hatano
- 申请人地址： JP
- 专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址： JP
- 代理机构： Husch Blackwell LLP
- 优先权： JP2009-002567 20090108
- 主分类号： H01L27/32
- IPC分类号： H01L27/32 ; H05B33/02 ; H05B33/04 ; H05B33/12 ; H01L27/12 ; H01L29/786 ; H01L51/00 ; H01L51/52
摘要：
Thinned and highly reliable light emitting elements are provided. Further, light emitting devices in which light emitting elements are formed over flexible substrates are manufactured with high yield. One light emitting device includes a flexible substrate, a light emitting element formed over the flexible substrate, and a resin film covering the light emitting element, and in the light emitting element, an insulating layer serving as a partition has a convex portion and the convex portion is embedded in the resin film, that is, the resin film covers an entire surface of the insulating layer and an entire surface of the second electrode, whereby the light emitting element can be thinned and highly reliable. In addition, a light emitting device can be manufactured with high yield in a manufacturing process thereof.
公开/授权文献
- US08698172B2 Light emitting device and electronic device 公开/授权日：2014-04-15
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