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    Method for manufacturing flexible semiconductor device
    7.
    发明授权
    Method for manufacturing flexible semiconductor device 有权
    柔性半导体器件的制造方法

    公开(公告)号：US08058083B2

    公开(公告)日：2011-11-15

    申请号：US12619776

    申请日：2009-11-17

    申请人： Shingo Eguchi ,  Yoshiaki Oikawa ,  Masahiro Katayama ,  Ami Nakamura ,  Yohei Monma

    发明人： Shingo Eguchi ,  Yoshiaki Oikawa ,  Masahiro Katayama ,  Ami Nakamura ,  Yohei Monma

    IPC分类号： H01L21/00

    CPC分类号： H01L27/1266 ,  H01L21/32134 ,  H01L27/1214

    摘要： It is an object of one embodiment of the preset invention to conduct separation without damaging a semiconductor element when the semiconductor element is made flexible. Further, it is another object of one embodiment of the preset invention to provide a technique for weakening adhesion between a separation layer and a buffer layer. Furthermore, it is another object of one embodiment of the preset invention to provide a technique for preventing generation of the bending stress on a semiconductor element due to separation. A semiconductor element formed over a separation layer with a buffer layer interposed therebetween is separated by dissolving the separation layer by using an etchant. Alternatively, separation is conducted by inserting a film into a region where a separation layer is dissolved by being in contact with an etchant and moving the film in a direction toward a region where the separation layer is not dissolved.

    摘要翻译： 本发明的一个实施例的目的是当半导体元件变得柔性时进行分离而不损坏半导体元件。 此外，本发明的一个实施方案的另一个目的是提供一种削弱分离层和缓冲层之间粘附性的技术。 此外，本发明的一个实施例的另一个目的是提供一种用于防止由于分离而在半导体元件上产生弯曲应力的技术。 通过使用蚀刻剂溶解分离层来分离形成在分离层上的缓冲层之间的半导体元件。 或者，通过与蚀刻剂接触并将膜沿朝向分离层不溶解的区域的方向移动而将膜插入到分离层溶解的区域中进行分离。

    METHOD FOR MANUFACTURING FLEXIBLE SEMICONDUCTOR DEVICE
    8.
    发明申请
    METHOD FOR MANUFACTURING FLEXIBLE SEMICONDUCTOR DEVICE 有权
    制造柔性半导体器件的方法

    公开(公告)号：US20100124795A1

    公开(公告)日：2010-05-20

    申请号：US12619776

    申请日：2009-11-17

    申请人： Shingo Eguchi ,  Yoshiaki Oikawa ,  Masahiro Katayama ,  Ami Nakamura ,  Yohei Monma

    发明人： Shingo Eguchi ,  Yoshiaki Oikawa ,  Masahiro Katayama ,  Ami Nakamura ,  Yohei Monma

    IPC分类号： H01L21/28 ,  H01L21/20 ,  H01L21/306

    CPC分类号： H01L27/1266 ,  H01L21/32134 ,  H01L27/1214

    摘要： It is an object of one embodiment of the preset invention to conduct separation without damaging a semiconductor element when the semiconductor element is made flexible. Further, it is another object of one embodiment of the preset invention to provide a technique for weakening adhesion between a separation layer and a buffer layer. Furthermore, it is another object of one embodiment of the preset invention to provide a technique for preventing generation of the bending stress on a semiconductor element due to separation. A semiconductor element formed over a separation layer with a buffer layer interposed therebetween is separated by dissolving the separation layer by using an etchant. Alternatively, separation is conducted by inserting a film into a region where a separation layer is dissolved by being in contact with an etchant and moving the film in a direction toward a region where the separation layer is not dissolved.

    摘要翻译： 本发明的一个实施例的目的是当半导体元件变得柔性时进行分离而不损坏半导体元件。 此外，本发明的一个实施方案的另一个目的是提供一种削弱分离层和缓冲层之间粘附性的技术。 此外，本发明的一个实施例的另一个目的是提供一种用于防止由于分离而在半导体元件上产生弯曲应力的技术。 通过使用蚀刻剂溶解分离层来分离形成在分离层上的缓冲层之间的半导体元件。 或者，通过与蚀刻剂接触并将膜沿朝向分离层不溶解的区域的方向移动而将膜插入到分离层溶解的区域中进行分离。