A method is described that includes monitoring degradation of a semiconductor chip's transistors during normal operation. The method further includes raising an internal voltage of the semiconductor chip in response to the degradation. The method further includes determining that the degradation has reached a threshold. The method further includes triggering application of an elevated temperature to the semiconductor chip so that the degradation is at least partially reversed. The method further includes applying a new lower internal voltage of the semiconductor chip in account of the degradation reversal.