- 专利标题: STT-MRAM cell structures
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申请号: US15421204申请日: 2017-01-31
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公开(公告)号: US09940989B2公开(公告)日: 2018-04-10
- 发明人: Jun Liu , Gurtej Sandhu
- 申请人: Micron Technology, Inc.
- 申请人地址: US ID Boise
- 专利权人: Micron Technology, Inc.
- 当前专利权人: Micron Technology, Inc.
- 当前专利权人地址: US ID Boise
- 代理机构: Fletcher Yoder, P.C.
- 主分类号: G11C11/00
- IPC分类号: G11C11/00 ; G11C11/16 ; H01L29/66 ; H01L43/12 ; H01L43/02 ; H01L43/08
摘要:
A magnetic cell structure including a nonmagnetic bridge, and methods of fabricating the structure are provided. The magnetic cell structure includes a free layer, a pinned layer, and a nonmagnetic bridge electrically connecting the free layer and the pinned layer. The shape and/or configuration of the nonmagnetic bridge directs a programming current through the magnetic cell structure such that the cross sectional area of the programming current in the free layer of the structure is less than the cross section of the structure. The decrease in the cross sectional area of the programming current in the free layer enables a lower programming current to reach a critical switching current density in the free layer and switch the magnetization of the free layer, programming the magnetic cell.
公开/授权文献
- US20170140806A1 STT-MRAM CELL STRUCTURES 公开/授权日:2017-05-18
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