A method for manufacturing a semiconductor device includes forming first and second lower structures including selection elements on first and second chip regions of a substrate, respectively, forming first and second mold layers on the first and second lower structures, respectively, forming first and second support layers on the first and second mold layers, respectively, patterning the first support layer and the first mold layer to form first holes exposing the first lower structure, forming first lower electrodes in the first holes, forming a support pattern including at least one opening by selectively patterning the first support layer while leaving the second support layer, and removing the first mold layer through the opening. A top surface of the support pattern is disposed at a substantially same level as a top surface of the second support layer.