Devices and methods of forming the devices are disclosed. The device includes a substrate and a color LED pixel disposed on the substrate. The color LED pixel includes a red LED, a green LED and a blue LED. Each of the color LED includes a specific color LED body disposed on the respective color region on the substrate, a specific color multiple quantum well (MQW) on the respective color LED body and a specific color top LED layer disposed over the respective color MQW. The MQWs of the red LED, green LED and blue LED includes at least an indium gallium nitride (InxGa1−xN) layer and a gallium nitride (GaN), where x is the atomic percentage of In in the InxGa1−xN layer, and the MQWs of the red LED, green LED and blue LED have different bandgaps by varying x of the InxGa1−xN layer in the red LED, the green LED and the blue LED.