Invention Grant
- Patent Title: Semiconductor device and manufacturing method therefor
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Application No.: US15068573Application Date: 2016-03-12
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Publication No.: US09941379B2Publication Date: 2018-04-10
- Inventor: Chih-Ming Sun , Hsin-Hui Hsu , Ming-Han Tsai
- Applicant: PixArt Imaging Incorporation
- Applicant Address: TW Hsin-Chu
- Assignee: PIXART IMAGING INCORPORATION
- Current Assignee: PIXART IMAGING INCORPORATION
- Current Assignee Address: TW Hsin-Chu
- Agency: Tung & Associates
- Priority: TW104119183A 20150612
- Main IPC: H01L21/308
- IPC: H01L21/308 ; H01L21/311 ; H01L21/762 ; H01L29/51 ; H01L29/40
Abstract:
The present invention discloses a manufacturing method for a semiconductor device. The manufacturing method includes: providing a substrate; forming a semiconductor stacked structure on the substrate; forming at least apart of a stacked cap layer on the semiconductor stacked structure, wherein the part of the stacked cap layer includes a nitride layer; removing a part of the nitride layer; forming the rest part of the stacked cap layer; forming a protection layer on the stacked cap layer, and etching the protection layer to form an opening, wherein the nitride layer is not exposed by the opening; and introducing an etchant material into the opening to etch the substrate. The present invention also provides a semiconductor device made by the method.
Public/Granted literature
- US20160365423A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR Public/Granted day:2016-12-15
Information query
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