Invention Grant
- Patent Title: Schottky diode having a varied width structure
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Application No.: US15341448Application Date: 2016-11-02
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Publication No.: US09941418B2Publication Date: 2018-04-10
- Inventor: Jeong Woo Park , Kyung Hyun Park , Hyun Sung Ko
- Applicant: Electronics and Telecommunications Research Institute
- Applicant Address: KR Daejeon
- Assignee: Electronics and Telecommunications Research Institute
- Current Assignee: Electronics and Telecommunications Research Institute
- Current Assignee Address: KR Daejeon
- Agency: William Park & Associates Ltd.
- Priority: KR10-2016-0025264 20160302
- Main IPC: H01L29/87
- IPC: H01L29/87 ; H01L29/20 ; H01L29/66 ; H01L23/66 ; H01L51/05 ; H01L29/872 ; H01L21/02 ; H01L21/306 ; H01L29/205
Abstract:
Provided herein is a Schottky diode including: a first semiconductor layer; an intermediate layer provided over the first semiconductor layer; a second semiconductor layer provided over the intermediate layer; an anode provided over the second semiconductor layer; and a cathode provided over the first semiconductor layer, wherein in a sectional view, a width of the second semiconductor layer is greater than a width of the intermediate layer.
Public/Granted literature
- US20170256656A1 SCHOTTKY DIODE AND MANUFACTURING METHOD OF THE SAME Public/Granted day:2017-09-07
Information query
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