Abstract:
Provided is a terahertz wave generating/detecting apparatus and a method for manufacturing the same. The terahertz wave generating/detecting apparatus includes; a substrate having an active region and a transmitting region; a lower metal layer extending in a first direction on the active region and the transmitting region of the substrate; a graphene layer disposed on the lower metal layer on the active region; and upper metal layers extending in the first direction on the graphene layer of the active region and the substrate in the transmission region, wherein a terahertz wave is generated or amplified by a surface plasmon polariton that is induced on a boundary surface between the graphene layer and the lower metal layer by beated laser light applied to the graphene layer and the metal layer.
Abstract:
A measurement apparatus for measuring a coating amount of a slurry according to the present disclosure includes a light emitter configured to irradiate terahertz wave onto a release paper coated with the slurry, a light receiver configured to receive the terahertz wave, which is irradiated from the light emitter and passes through the release paper coated with the slurry, to obtain a power of the terahertz wave, and a calculating part configured to calculate a thickness of an electrode, formed from the slurry applied to the release paper, based on the power of the terahertz wave received by the light receiver.
Abstract:
The inventive concept relates to a beating signal monitoring module and a terahertz wave generation device and an optical signal monitoring device that including the beating signal monitoring module. The beating signal monitoring module includes a nonlinear unit generating an optical signal including a FWM light in response to a beating signal generated from a first light and a second light; a filter unit separating the FWM light from the optical signal and outputting the separated FWM light; and a monitoring unit monitoring the beating signal using the separated FWM light. The beating signal monitoring module and a terahertz wave generation device and an optical signal monitoring device that including the beating signal monitoring module can effectively monitor a beating signal being generated by two lasers using a Four Wave Mixing signal.
Abstract:
A contactless thickness measuring apparatus is provided which includes an terahertz transmitter configured to receive the first optical path signal from the coupler and to generate a terahertz continuous wave using the first optical signal and an applied bias; an optical delay line configured to delay the second optical path signal output from the coupler; and an terahertz receiver configured to receive the terahertz continuous wave penetrating a sample and to detect an optical current using the terahertz continuous wave and the second optical path signal delayed. A thickness of the sample is a value corresponding to the optical current which phase value becomes a constant regardless of a plurality of measurement frequencies.
Abstract:
An optical device may include first and second lasers generating first and second laser beams; and a photo detector detecting the first and second laser beams. The optical detector comprises a substrate, a first impurity layer on the substrate, an absorption layer on the first impurity layer and a second impurity layer on the absorption layer. The absorption layer generates a terahertz by a beating of the first and second laser beams and has a thickness of less than 0.2 μm.
Abstract:
An optical device may include first and second lasers generating first and second laser beams; and a photo detector detecting the first and second laser beams. The optical detector comprises a substrate, a first impurity layer on the substrate, an absorption layer on the first impurity layer and a second impurity layer on the absorption layer. The absorption layer generates a terahertz by a beating of the first and second laser beams and has a thickness of less than 0.2 μm.
Abstract:
Provided are a polygon mirror assembly and a scan device. A polygon mirror assembly includes: a polygon mirror including a plurality of reflection surfaces spaced apart from a rotation axis by a predetermined distance; a first motor for rotating the polygon mirror around the rotation axis; a second motor for moving the polygon mirror in a first axial direction such that the rotation axis is tilted while the first motor rotates the polygon mirror; and a clock signal extraction surface for extracting a clock signal for detecting a change in a rotational speed of the first motor.
Abstract:
A Schottky barrier diode includes a substrate, a first semiconductor layer formed on the substrate, a second semiconductor layer formed on the first semiconductor layer, and a metal layer formed on the second semiconductor layer to form a Schottky barrier, wherein the first semiconductor layer and the second semiconductor layer are formed of different materials, and a conduction band offset between the first semiconductor layer and the second semiconductor layer is less than a set value.
Abstract:
Provided herein is terahertz continuous wave emitting device having: a plurality of laser light sources generating a plurality of laser lights; and an absorption area formed between the plurality of laser light sources in order to adjust interaction of the plurality of laser lights, wherein the absorption area is configured to have a photo diode, an antenna integrated into the photo diode.
Abstract:
Provided is a semiconductor device. The semiconductor device includes a semiconductor substrate including monocrystalline silicon or polycrystalline silicon, a first insulating layer on the semiconductor substrate, the first insulating layer including a local region in which a portion of an upper surface of the first insulating layer is recessed, a channel layer provided in the local region of the first insulating layer, a silicide provided on one side surface of the channel layer, a control gate provided on the channel layer, a gate insulating film provided between the channel layer and the control gate, and a polarity control gate arranged so as to overlap an interface between the channel layer and the silicide, wherein the polarity control gate is spaced apart from the control gate, and the channel layer includes monocrystalline silicon.