Invention Grant
- Patent Title: STI shape near fin bottom of Si fin in bulk FinFET
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Application No.: US12843693Application Date: 2010-07-26
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Publication No.: US09953885B2Publication Date: 2018-04-24
- Inventor: Feng Yuan , Tsung-Lin Lee , Hung-Ming Chen , Chang-Yun Chang
- Applicant: Feng Yuan , Tsung-Lin Lee , Hung-Ming Chen , Chang-Yun Chang
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- Main IPC: H01L21/76
- IPC: H01L21/76 ; H01L21/84 ; H01L21/762 ; H01L21/8234 ; H01L29/66
Abstract:
A method of forming an integrated circuit structure includes providing a semiconductor substrate including a top surface; forming a first insulation region and a second insulation region in the semiconductor substrate; and recessing the first insulation region and the second insulation region. Top surfaces of remaining portions of the first insulation region and the second insulation region are flat surfaces or divot surfaces. A portion of the semiconductor substrate between and adjoining removed portions of the first insulation region and the second insulation region forms a fin.
Public/Granted literature
- US20110097889A1 STI Shape Near Fin Bottom of Si Fin in Bulk FinFET Public/Granted day:2011-04-28
Information query
IPC分类:
