- 专利标题： FinFET semiconductor device
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申请号： US15486432申请日： 2017-04-13
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公开(公告)号： US09953977B1公开(公告)日： 2018-04-24
- 发明人: Kangguo Cheng , Ruilong Xie , Tenko Yamashita , Chun-Chen Yeh
- 申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 代理商 David Quinn
- 主分类号： H01L21/8234
- IPC分类号： H01L21/8234 ; H01L27/088 ; H01L29/66 ; H01L21/02 ; H01L21/311 ; H01L29/51
摘要：
Fabricating a semiconductor structure, including: forming a fin structure on a substrate by: forming a first fin layer on the substrate; forming a first insulator layer on the first fin layer; forming a second fin layer on the first insulator layer; forming a second insulator layer on the second fin layer; forming a third fin layer on the second insulator layer; and forming a gate structure on a plurality of opposing sides and a top surface of the fin structure.
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