发明授权
- 专利标题: Photoresist additive for outgassing reduction and out-of-band radiation absorption
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申请号: US14876879申请日: 2015-10-07
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公开(公告)号: US09958779B2公开(公告)日: 2018-05-01
- 发明人: Wei-Han Lai , Ching-Yu Chang , Chien-Wei Wang
- 申请人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址: TW Hsin-Chu
- 专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址: TW Hsin-Chu
- 代理机构: Haynes and Boone, LLP
- 主分类号: G03F7/004
- IPC分类号: G03F7/004 ; G03F7/11 ; G03F7/09 ; G03F7/039 ; G03F7/20 ; G03F7/16 ; H01L21/027 ; B05D3/00 ; H01L21/033 ; C08F220/22 ; C08F18/04
摘要:
A patternable layer is formed over a substrate. A photo-sensitive layer is formed over the patternable layer. The photo-sensitive layer contains an additive. The additive contains at least a floating control chemical and a volume control chemical. A spin drying or a baking process is performed to the photo-sensitive layer. The floating control chemical causes the additive to rise upward during the spin drying or baking process. Thereafter, as a part of an extreme ultraviolet (EUV) lithography process, the photo-sensitive layer is exposed. One or more outgassing chemicals are generated inside the photo-sensitive layer during the exposing. The volume control chemical is sufficiently voluminous and dense to trap the outgassing chemicals inside the photo-sensitive layer.
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