Invention Grant
- Patent Title: Photoresist additive for outgassing reduction and out-of-band radiation absorption
-
Application No.: US14876879Application Date: 2015-10-07
-
Publication No.: US09958779B2Publication Date: 2018-05-01
- Inventor: Wei-Han Lai , Ching-Yu Chang , Chien-Wei Wang
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: G03F7/004
- IPC: G03F7/004 ; G03F7/11 ; G03F7/09 ; G03F7/039 ; G03F7/20 ; G03F7/16 ; H01L21/027 ; B05D3/00 ; H01L21/033 ; C08F220/22 ; C08F18/04

Abstract:
A patternable layer is formed over a substrate. A photo-sensitive layer is formed over the patternable layer. The photo-sensitive layer contains an additive. The additive contains at least a floating control chemical and a volume control chemical. A spin drying or a baking process is performed to the photo-sensitive layer. The floating control chemical causes the additive to rise upward during the spin drying or baking process. Thereafter, as a part of an extreme ultraviolet (EUV) lithography process, the photo-sensitive layer is exposed. One or more outgassing chemicals are generated inside the photo-sensitive layer during the exposing. The volume control chemical is sufficiently voluminous and dense to trap the outgassing chemicals inside the photo-sensitive layer.
Public/Granted literature
- US20160238934A1 NOVEL PHOTORESIST ADDITIVE FOR OUTGASSING REDUCTION AND OUT-OF-BAND RADIATION ABSORPTION Public/Granted day:2016-08-18
Information query
IPC分类: