Invention Grant
- Patent Title: Timed sense amplifier circuits and methods in a semiconductor memory
-
Application No.: US15013897Application Date: 2016-02-02
-
Publication No.: US09959912B2Publication Date: 2018-05-01
- Inventor: Chulmin Jung , Fahad Ahmed , Sei Seung Yoon , Keejong Kim
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Arent Fox, LLP
- Main IPC: G11C7/02
- IPC: G11C7/02 ; G11C7/00 ; G11C7/08 ; G11C7/14 ; G11C11/418 ; G11C11/419 ; G11C29/02 ; G11C29/14 ; G11C29/50 ; G11C5/06 ; G11C7/06 ; G11C7/10

Abstract:
A memory includes a memory cell, one bitline coupled to the memory cell, a sense amplifier coupled to the one bitline, a timing circuit configured to enable the sense amplifier during a read operation, a control circuit configured to enable the sense amplifier independent of the timing circuit, and a pull-up circuit configured to pull up the one bitline while the sense amplifier is enabled by the control circuit. The method includes enabling a sense amplifier in a read operation by a timing circuit. The sense amplifier is coupled to at least one bitline, and the at least one bitline is coupled to a memory cell. The method further includes enabling the sense amplifier independent of the timing circuit in a second operation and pulling up the at least one bitline by a pull-up circuit while the sense amplifier is enabled in the second operation.
Public/Granted literature
- US20170221551A1 TIMED SENSE AMPLIFIER CIRCUITS AND METHODS IN A SEMICONDUCTOR MEMORY Public/Granted day:2017-08-03
Information query