Invention Grant
- Patent Title: Thin film magnet inductor structure for high quality (Q)-factor radio frequency (RF) applications
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Application No.: US14941493Application Date: 2015-11-13
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Publication No.: US09959964B2Publication Date: 2018-05-01
- Inventor: Changhan Hobie Yun , David Francis Berdy , Daeik Daniel Kim , Chengjie Zuo , Jonghae Kim , Je-Hsiung Jeffrey Lan , Mario Francisco Velez , Niranjan Sunil Mudakatte
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Qualcomm Incorporated/Seyfarth
- Main IPC: H01F5/00
- IPC: H01F5/00 ; H01F27/28 ; H01F10/12 ; H01F41/04

Abstract:
A thin film magnet (TFM) three-dimensional (3D) inductor structure may include a substrate with conductive vias extending through the substrate. The TFM 3D inductor structure may also include a magnetic thin film layer on at least sidewalls of the conductive vias and on a first side and an opposing second side of the substrate. The TFM 3D inductor structure may further include a first conductive trace directly on the magnetic thin film layer on the first side of the substrate and electrically coupling to at least one of the conductive vias. The TFM 3D inductor structure also includes a second conductive trace directly on the magnetic thin film layer on the second side of the substrate and coupled to at least one of the conductive vias.
Public/Granted literature
- US20170140862A1 THIN FILM MAGNET INDUCTOR STRUCTURE FOR HIGH QUALITY (Q)-FACTOR RADIO FREQUENCY (RF) APPLICATIONS Public/Granted day:2017-05-18
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