Invention Grant
- Patent Title: Methods of manufacturing semiconductor devices
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Application No.: US15243248Application Date: 2016-08-22
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Publication No.: US09960169B2Publication Date: 2018-05-01
- Inventor: Jun-Seok Lee , Byoung-Ho Kwon , Sang-Kyun Kim , Yun-Jeong Kim , Seung-Ho Park , Hao Cui , In-Seak Hwang
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Ward & Smith, P.A.
- Priority: KR10-2015-0123309 20150901
- Main IPC: H01L27/108
- IPC: H01L27/108 ; H01L21/762 ; H01L21/3105
Abstract:
In a method of manufacturing a semiconductor device, mask patterns are formed on a semiconductor substrate. An organic layer is formed on the semiconductor substrate to cover the mask patterns. An upper portion of the organic layer is planarized using a polishing composition. The polishing composition includes an oxidizing agent and is devoid of abrasive particles.
Public/Granted literature
- US20170062437A1 METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES Public/Granted day:2017-03-02
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