公开(公告)号：US11041097B2

公开(公告)日：2021-06-22

申请号：US16661287

申请日：2019-10-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyung-il Park ,  Myeong Hoon Han ,  Sanghyun Park ,  Wonki Hur ,  Seungho Park ,  Hao Cui

IPC: C09G1/02 ,  H01L27/24 ,  H01L45/00

Abstract: A polishing composition and a method of fabricating a semiconductor device using the same, the polishing composition including an abrasive; a first additive that includes a C5 to C30 hydrocarbon including an amide group and a carboxyl group or a C5 to C30 hydrocarbon including two or more amine groups; and a second additive that includes a sulfonic acid, a sulfonate, or a sulfonate salt.

公开(公告)号：US10964751B2

公开(公告)日：2021-03-30

申请号：US16586140

申请日：2019-09-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hao Cui ,  Se Yun Park ,  Jong Hyuk Park ,  Bo Un Yoon ,  Il Young Yoon

IPC: H01L27/24 ,  H01L45/00

Abstract: A semiconductor device that includes a plurality of word lines disposed on a substrate in which p-type and n-type active regions are defined, and extends in a first direction. A plurality of bit lines is disposed on the plurality of word lines and extends in a second direction, perpendicular to the first direction. A plurality of memory cells is disposed between the plurality of word lines and the plurality of bit lines and each includes a data storage pattern. The plurality of memory cells includes a plurality of dummy memory cells and a plurality of main memory cells. An upper surface of the data storage pattern of the main memory cells is higher than an upper surface of the data storage pattern of the dummy memory cells.

公开(公告)号：US10711160B2

公开(公告)日：2020-07-14

申请号：US15883655

申请日：2018-01-30

Applicant: Samsung Electronics Co., Ltd. ,  KCTECH CO., LTD.

Inventor： Seung Ho Park ,  Hyun Goo Kong ,  Jung Hun Kim ,  Sang Mi Lee ,  Woo In Lee ,  Hee Sook Cheon ,  Sang Kyun Kim ,  Hao Cui ,  Jong Hyuk Park ,  Il Young Yoon

IPC: H01L21/3205 ,  C09G1/02 ,  H01L21/28 ,  H01L21/321 ,  H01L27/108

Abstract: A slurry composition for polishing a metal layer and a method for fabricating a semiconductor device using the same are provided. The slurry composition for polishing a metal layer includes polishing particles including a metal oxide, an oxidizer including hydrogen peroxide, and a first polishing regulator including at least one selected from a group consisting of phosphate, phosphite, hypophosphite, and metaphosphate, wherein a content of the oxidizer is 0.01 wt % to 0.09 wt % with respect to 100 wt % of the slurry composition for polishing the metal layer.

公开(公告)号：US09960169B2

公开(公告)日：2018-05-01

申请号：US15243248

申请日：2016-08-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jun-Seok Lee ,  Byoung-Ho Kwon ,  Sang-Kyun Kim ,  Yun-Jeong Kim ,  Seung-Ho Park ,  Hao Cui ,  In-Seak Hwang

IPC: H01L27/108 ,  H01L21/762 ,  H01L21/3105

CPC classification number: H01L27/10873 ,  H01L21/0337 ,  H01L21/31053 ,  H01L21/31058 ,  H01L21/31144 ,  H01L21/32139 ,  H01L21/76224 ,  H01L21/76229 ,  H01L27/10814 ,  H01L27/10823 ,  H01L27/10855 ,  H01L27/10876 ,  H01L27/10894

Abstract: In a method of manufacturing a semiconductor device, mask patterns are formed on a semiconductor substrate. An organic layer is formed on the semiconductor substrate to cover the mask patterns. An upper portion of the organic layer is planarized using a polishing composition. The polishing composition includes an oxidizing agent and is devoid of abrasive particles.

公开(公告)号：US20170062437A1

公开(公告)日：2017-03-02

申请号：US15243248

申请日：2016-08-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jun-Seok Lee ,  Byoung-Ho Kwon ,  Sang-Kyun Kim ,  Yun-Jeong Kim ,  Seung-Ho Park ,  Hao Cui ,  ln-Seak Hwang

IPC: H01L27/108 ,  H01L21/3105 ,  H01L21/762

CPC classification number: H01L27/10873 ,  H01L21/0337 ,  H01L21/31053 ,  H01L21/31058 ,  H01L21/31144 ,  H01L21/32139 ,  H01L21/76224 ,  H01L21/76229 ,  H01L27/10814 ,  H01L27/10823 ,  H01L27/10855 ,  H01L27/10876 ,  H01L27/10894

Abstract: In a method of manufacturing a semiconductor device, mask patterns are formed on a semiconductor substrate. An organic layer is formed on the semiconductor substrate to cover the mask patterns. An upper portion of the organic layer is planarized using a polishing composition. The polishing composition includes an oxidizing agent and is devoid of abrasive particles.

Abstract translation: 在制造半导体器件的方法中，在半导体衬底上形成掩模图案。 在半导体衬底上形成有机层以覆盖掩模图案。 使用抛光组合物对有机层的上部进行平面化处理。 抛光组合物包括氧化剂并且没有磨料颗粒。