- 专利标题： Method to improve reliability of replacement gate device
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申请号： US15258597申请日： 2016-09-07
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公开(公告)号： US09960252B2公开(公告)日： 2018-05-01
- 发明人: Takashi Ando , Eduard A. Cartier , Kisik Choi , Vijay Narayanan
- 申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , GLOBALFOUNDRIES Inc.
- 申请人地址： US NY Armonk KY Grand Cayman
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION,GLOBALFOUNDRIES INC.
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION,GLOBALFOUNDRIES INC.
- 当前专利权人地址： US NY Armonk KY Grand Cayman
- 代理机构： Tutunjian & Bitetto, P.C.
- 代理商 Vazken Alexanian
- 主分类号： H01L21/3205
- IPC分类号： H01L21/3205 ; H01L29/66 ; H01L21/28 ; H01L21/324 ; H01L29/423 ; H01L21/321 ; H01L21/02
摘要：
A method of fabricating a replacement gate stack for a semiconductor device includes the following steps after removal of a dummy gate: growing a high-k dielectric layer over the area vacated by the dummy gate; depositing a thin metal layer over the high-k dielectric layer; depositing a sacrificial layer over the thin metal layer; performing a first rapid thermal anneal; removing the sacrificial layer; and depositing a metal layer of low resistivity metal for gap fill.
公开/授权文献
- US20160380076A1 METHOD TO IMPROVE RELIABILITY OF REPLACEMENT GATE DEVICE 公开/授权日：2016-12-29
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