- 专利标题： Manufacturing method of semiconductor device
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申请号： US15632399申请日： 2017-06-26
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公开(公告)号： US09966434B2公开(公告)日： 2018-05-08
- 发明人: Ming-Shiou Hsieh , Chun-Yao Yang , Shi-You Liu , Rong-Sin Lin , Han-Ting Yen , Yi-Wei Chen , I-Cheng Hu , Yu-Shu Lin , Neng-Hui Yang
- 申请人： UNITED MICROELECTRONICS CORP.
- 申请人地址： TW Hsin-Chu
- 专利权人： UNITED MICROELECTRONICS CORP.
- 当前专利权人： UNITED MICROELECTRONICS CORP.
- 当前专利权人地址： TW Hsin-Chu
- 代理商 Winston Hsu
- 优先权： CN201610313243 20160512
- 主分类号： H01L29/08
- IPC分类号： H01L29/08 ; H01L21/02 ; H01L29/165 ; H01L29/36 ; H01L21/265 ; H01L21/324 ; H01L29/167 ; H01L21/283 ; H01L21/768 ; H01L21/8234 ; H01L29/417 ; H01L29/78 ; H01L29/06 ; H01L27/088
摘要：
A semiconductor device includes a substrate including a plurality of transistor devices formed thereon, at least an epitaxial structure formed in between the transistor devices, and a tri-layered structure formed on the epitaxial structure. The epitaxial structure includes a first semiconductor material and a second semiconductor material, and a lattice constant of the second semiconductor material is larger than a lattice constant of the first semiconductor material. The tri-layered structure includes an undoped epitaxial layer, a metal-semiconductor compound layer, and a doped epitaxial layer sandwiched in between the undoped epitaxial layer and the metal-semiconductor compound layer. The undoped epitaxial layer and the doped epitaxial layer include at least the second semiconductor material.
公开/授权文献
- US20170330937A1 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 公开/授权日：2017-11-16
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