Invention Grant
- Patent Title: Symmetrical lateral bipolar junction transistor and use of same in characterizing and protecting transistors
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Application No.: US14476976Application Date: 2014-09-04
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Publication No.: US09966459B2Publication Date: 2018-05-08
- Inventor: Biswanath Senapati , Jagar Singh
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Heslin Rothenberg Farley & Mesiti P.C.
- Agent Wayne F. Reinke, Esq.
- Main IPC: H01L29/735
- IPC: H01L29/735 ; H01L29/08 ; H01L29/10 ; H01L29/06 ; H01L27/06 ; G01R31/26 ; G01R31/28 ; H01L21/66 ; H01L29/417 ; H01L29/423 ; H01L27/02

Abstract:
A symmetrical lateral bipolar junction transistor (SLBJT) is provided. The SLBJT includes a p-type semiconductor substrate, a n-type well, an emitter of a SLBJT situated in the n-type well, a base of the SLBJT situated in the n-type well and spaced from the emitter by a distance on one side of the base, a collector of the SLBJT situated in the n-type well and spaced from the base by the distance on an opposite side of the base, and an electrical connection to the substrate outside the n-type well. The SLBJT is used to characterize a transistor in a circuit by electrically coupling the SLBJT to a gate of the test transistor, applying a voltage to the gate, and characterizing aspect(s) of the test transistor under the applied voltage. The SLBJT protects the gate against damage to the gate dielectric.
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