Invention Grant
- Patent Title: Semiconductor device including a phase change material
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Application No.: US14796682Application Date: 2015-07-10
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Publication No.: US09972613B2Publication Date: 2018-05-15
- Inventor: Hans-Joachim Schulze , Guenther Ruhl , Hans-Joerg Timme
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Murphy, Bilak & Homiller, PLLC
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L27/02 ; H01L23/373 ; H01L23/367 ; H01L23/427 ; H01L23/495 ; H01L29/78 ; H01L29/739 ; H01L29/861 ; H01L27/24 ; H01L45/00 ; H01L29/43 ; H01L23/62 ; H01L23/525 ; H01L23/00 ; H01L29/417 ; H01L29/423 ; H01L29/16

Abstract:
A semiconductor device includes a transistor having a plurality of transistor cells in a semiconductor body. Each transistor cell includes a control terminal and first and second load terminals. The transistor further includes a phase change material exhibiting a solid-solid phase change at a phase transition temperature Tc between 150° C. and 400° C. The control terminals of the plurality of transistor cells are electrically connected to one another.
Public/Granted literature
- US20150318272A1 Semiconductor Device Including a Phase Change Material Public/Granted day:2015-11-05
Information query
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