- 专利标题: Post growth defect reduction for heteroepitaxial materials
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申请号: US15363625申请日: 2016-11-29
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公开(公告)号: US09972688B2公开(公告)日: 2018-05-15
- 发明人: John A. Ott , Devendra K. Sadana , Brent A. Wacaser
- 申请人: International Business Machines Corporation
- 申请人地址: US NY Armonk
- 专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址: US NY Armonk
- 代理机构: Cantor Colburn LLP
- 代理商 Louis Percello
- 主分类号: H01L29/15
- IPC分类号: H01L29/15 ; H01L29/34 ; H01L29/20 ; H01L29/06
摘要:
A method of reducing defects in epitaxially grown III-V semiconductor material comprising: epitaxially growing a III-V semiconductor on a substrate; patterning and removing portions of the III-V semiconductor to form openings; depositing thermally stable material in the openings; depositing a capping layer over the semiconductor material and thermally stable material to form a substantially enclosed semiconductor; and annealing the substantially enclosed semiconductor.