Invention Grant
- Patent Title: Method to improve reliability of replacement gate device
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Application No.: US15267887Application Date: 2016-09-16
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Publication No.: US09972697B2Publication Date: 2018-05-15
- Inventor: Takashi Ando , Eduard A. Cartier , Kisik Choi , Vijay Narayanan
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION , GLOBALFOUNDRIES Inc.
- Applicant Address: US NY Armonk KY Grand Cayman
- Assignee: International Business Machines Corporation,GLOBALFOUNDRIES Inc.
- Current Assignee: International Business Machines Corporation,GLOBALFOUNDRIES Inc.
- Current Assignee Address: US NY Armonk KY Grand Cayman
- Agency: Tutunjian & Bitetto, P.C.
- Agent Vazken Alexanian
- Main IPC: H01L21/3205
- IPC: H01L21/3205 ; H01L29/66 ; H01L21/28 ; H01L21/324 ; H01L29/423 ; H01L21/321 ; H01L21/02
Abstract:
A method of fabricating a replacement gate stack for a semiconductor device includes the following steps after removal of a dummy gate: growing a high-k dielectric layer over the area vacated by the dummy gate; depositing a thin metal layer over the high-k dielectric layer; depositing a sacrificial layer over the thin metal layer; performing a first rapid thermal anneal; removing the sacrificial layer; and depositing a metal layer of low resistivity metal for gap fill.
Public/Granted literature
- US20170005179A1 METHOD TO IMPROVE RELIABILITY OF REPLACEMENT GATE DEVICE Public/Granted day:2017-01-05
Information query
IPC分类:
