Invention Grant
- Patent Title: Semiconductor structure and manufacturing method thereof
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Application No.: US15498009Application Date: 2017-04-26
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Publication No.: US09975754B2Publication Date: 2018-05-22
- Inventor: Fu-Chun Huang , Li-Chen Yen , Tzu-Heng Wu , Yi-Heng Tsai , Chun-Ren Cheng
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee Address: TW Hsinchu
- Agency: WPAT, P.C., Intellectual Property Attorneys
- Agent Anthony King
- Main IPC: B81C1/00
- IPC: B81C1/00 ; B81B3/00

Abstract:
A method of manufacturing a semiconductor structure includes receiving a first substrate including a dielectric layer disposed over the first substrate; forming a sensing structure and a bonding structure over the dielectric layer; disposing a conductive layer on the sensing structure; disposing a barrier layer over the dielectric layer; removing a first portion of the barrier layer to at least partially expose the conductive layer on the sensing structure; and removing a second portion of the barrier layer to at least partially expose the bonding structure.
Public/Granted literature
- US20170297901A1 SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF Public/Granted day:2017-10-19
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