公开(公告)号：US09656855B1

公开(公告)日：2017-05-23

申请号：US15055072

申请日：2016-02-26

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

Inventor： Fu-Chun Huang ,  Li-Chen Yen ,  Tzu-Heng Wu ,  Yi-Heng Tsai ,  Chun-Ren Cheng

IPC: B81B3/00 ,  B81C1/00

CPC classification number: B81B3/0086 ,  B81B3/0008 ,  B81B2203/0307 ,  B81B2207/015 ,  B81B2207/07 ,  B81C1/00246 ,  B81C2201/0132 ,  B81C2201/0181 ,  B81C2203/035

Abstract: A semiconductor structure includes a substrate, a dielectric layer disposed over the substrate, a sensing structure disposed over the dielectric layer, a bonding structure disposed over the dielectric layer, a conductive layer covering the sensing structure, and a barrier layer disposed over the dielectric layer, the conductive layer and the bonding structure, wherein the conductive layer and the bonding structure are at least partially exposed from the barrier layer.

公开(公告)号：US10065852B2

公开(公告)日：2018-09-04

申请号：US15275976

申请日：2016-09-26

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

Inventor： Chun-Wen Cheng ,  Chia-Hua Chu ,  Ming-Dao Wu ,  Tzu-Heng Wu

IPC: B81B3/00 ,  B81C1/00 ,  H04R19/00

Abstract: A MEMS device includes a substrate, a supporter, a first back plate, a second back plate and a diaphragm. The substrate has a cavity. The supporter is over the substrate. The first back plate is over the cavity and fixed on the supporter. The second back plate is over the cavity and fixed on the supporter. The diaphragm is between the first back plate and the second back plate. The diaphragm includes a first sub-diaphragm and a second sub-diaphragm over the cavity and fixed on the supporter.

公开(公告)号：US09975754B2

公开(公告)日：2018-05-22

申请号：US15498009

申请日：2017-04-26

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

Inventor： Fu-Chun Huang ,  Li-Chen Yen ,  Tzu-Heng Wu ,  Yi-Heng Tsai ,  Chun-Ren Cheng

IPC: B81C1/00 ,  B81B3/00

CPC classification number: B81B3/0086 ,  B81B3/0008 ,  B81B2203/0307 ,  B81B2207/015 ,  B81B2207/07 ,  B81C1/00246 ,  B81C2201/0132 ,  B81C2201/0181 ,  B81C2203/035

Abstract: A method of manufacturing a semiconductor structure includes receiving a first substrate including a dielectric layer disposed over the first substrate; forming a sensing structure and a bonding structure over the dielectric layer; disposing a conductive layer on the sensing structure; disposing a barrier layer over the dielectric layer; removing a first portion of the barrier layer to at least partially expose the conductive layer on the sensing structure; and removing a second portion of the barrier layer to at least partially expose the bonding structure.

公开(公告)号：US10087071B2

公开(公告)日：2018-10-02

申请号：US15333520

申请日：2016-10-25

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD

Inventor： Tzu-Heng Wu ,  Chia-Hua Chu ,  Yi-Heng Tsai ,  Cheng San Chou ,  Chen Hsiung Yang

IPC: B81B7/00 ,  B81C1/00

Abstract: A semiconductor structure includes a first substrate, a second substrate disposed over the first substrate, and including a first surface, a second surface opposite to the first surface, a via portion extending between the first surface and the second surface, a first through hole and a second through hole, and a device disposed over the second surface, and including a dielectric layer, a backplate at least partially exposed from the dielectric layer and a membrane at least partially exposed from the dielectric layer and disposed between the backplate and the first substrate, wherein the via portion is disposed within the second through hole, and the dielectric layer is bonded with the second substrate, and the device is electrically connected to the first substrate through the via portion.