公开(公告)号：US10077187B2

公开(公告)日：2018-09-18

申请号：US15014871

申请日：2016-02-03

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

Inventor： Li-Chen Yen ,  Yi-Hsien Chang ,  Chun-Ren Cheng

IPC: H01L21/78 ,  B81C1/00 ,  H01L23/544

CPC classification number: B81C1/00825 ,  B81C1/00182 ,  B81C2203/0785 ,  H01L21/78 ,  H01L23/544 ,  H01L2223/5446

Abstract: A semiconductor manufacturing method includes providing a wafer. A layer is formed over a surface of the wafer where the layer is able to form a eutectic layer with a conductive element. The layer is partially removed so as to form a plurality of mesas. The wafer is bonded to a substrate through the plurality of mesas. The substrate is thinned down to a thickness so as to be less than a predetermined value.

公开(公告)号：US09656855B1

公开(公告)日：2017-05-23

申请号：US15055072

申请日：2016-02-26

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

Inventor： Fu-Chun Huang ,  Li-Chen Yen ,  Tzu-Heng Wu ,  Yi-Heng Tsai ,  Chun-Ren Cheng

IPC: B81B3/00 ,  B81C1/00

CPC classification number: B81B3/0086 ,  B81B3/0008 ,  B81B2203/0307 ,  B81B2207/015 ,  B81B2207/07 ,  B81C1/00246 ,  B81C2201/0132 ,  B81C2201/0181 ,  B81C2203/035

Abstract: A semiconductor structure includes a substrate, a dielectric layer disposed over the substrate, a sensing structure disposed over the dielectric layer, a bonding structure disposed over the dielectric layer, a conductive layer covering the sensing structure, and a barrier layer disposed over the dielectric layer, the conductive layer and the bonding structure, wherein the conductive layer and the bonding structure are at least partially exposed from the barrier layer.

公开(公告)号：US09975754B2

公开(公告)日：2018-05-22

申请号：US15498009

申请日：2017-04-26

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

Inventor： Fu-Chun Huang ,  Li-Chen Yen ,  Tzu-Heng Wu ,  Yi-Heng Tsai ,  Chun-Ren Cheng

IPC: B81C1/00 ,  B81B3/00

CPC classification number: B81B3/0086 ,  B81B3/0008 ,  B81B2203/0307 ,  B81B2207/015 ,  B81B2207/07 ,  B81C1/00246 ,  B81C2201/0132 ,  B81C2201/0181 ,  B81C2203/035

Abstract: A method of manufacturing a semiconductor structure includes receiving a first substrate including a dielectric layer disposed over the first substrate; forming a sensing structure and a bonding structure over the dielectric layer; disposing a conductive layer on the sensing structure; disposing a barrier layer over the dielectric layer; removing a first portion of the barrier layer to at least partially expose the conductive layer on the sensing structure; and removing a second portion of the barrier layer to at least partially expose the bonding structure.