Invention Grant
- Patent Title: Self-aligned multiple spacer patterning schemes for advanced nanometer technology
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Application No.: US15377629Application Date: 2016-12-13
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Publication No.: US09978596B2Publication Date: 2018-05-22
- Inventor: Ying Zhang , Uday Mitra , Praburam Gopalraja , Srinivas D. Nemani , Hua Chung
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Patterson + Sheridan LLP
- Main IPC: H01L21/302
- IPC: H01L21/302 ; H01L21/461 ; H01L21/033 ; H01L21/311 ; H01L21/768
Abstract:
The present disclosure provides forming nanostructures with precision dimension control and minimum lithographic related errors for features with dimension under 14 nanometers and beyond. A self-aligned multiple spacer patterning (SAMSP) process is provided herein and the process utilizes minimum lithographic exposure process, but rather multiple deposition/etching process to incrementally reduce feature sizes formed in the mask along the manufacturing process, until a desired extreme small dimension nanostructures are formed in a mask layer.
Public/Granted literature
- US20170092494A1 SELF-ALIGNED MULTIPLE SPACER PATTERNING SCHEMES FOR ADVANCED NANOMETER TECHNOLOGY Public/Granted day:2017-03-30
Information query
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