Invention Grant
- Patent Title: Oxide film removing method, oxide film removing apparatus, contact forming method, and contact forming system
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Application No.: US15596060Application Date: 2017-05-16
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Publication No.: US09984892B2Publication Date: 2018-05-29
- Inventor: Takashi Kobayashi , Seishi Murakami , Takashi Sakuma , Masahiko Tomita , Takamichi Kikuchi , Akitaka Shimizu , Takayuki Kamaishi , Einosuke Tsuda
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Abelman, Frayne & Schwab
- Priority: JP2016-100389 20160519
- Main IPC: H01L21/302
- IPC: H01L21/302 ; H01L21/308 ; H01L21/285 ; H01L21/67
Abstract:
Disclosed is a method for removing, from a target substrate having an insulating film with a predetermined pattern formed thereon, a silicon-containing oxide film formed in a silicon portion at a bottom of the pattern. The method includes: forming a carbon-based protective film on the entire surface of the insulating film including the pattern by ALD using a carbon source gas; selectively removing the carbon-based protective film on an upper surface of the insulating film and on the bottom of the pattern by an anisotropic plasma processing; removing the silicon-containing oxide film formed on the bottom of the pattern by etching; and removing a remaining portion of the carbon-based protective film.
Public/Granted literature
Information query
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