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公开(公告)号：US11193205B2
公开(公告)日：2021-12-07
申请号：US16211055
申请日：2018-12-05
发明人： Yuichi Furuya , Hiroyuki Mori , Einosuke Tsuda , Eiichi Komori , Tomohisa Kimoto
IPC分类号： C23C16/448 , H01J37/32 , C23C14/24
摘要： A source material container includes a housing, a tray assembly and a plurality of cylindrical members. The housing provides a carrier gas introduction port and an opening through which a gas containing source material vapor is outputted. The tray assembly trays stacked in the housing. The cylindrical members are arranged in a radial direction between the tray assembly and the housing. The outermost cylindrical member provides a slit and each of the other cylindrical members than the outermost cylindrical member provides a plurality of slits. From the introduction port to the gap between the tray assembly and the innermost cylindrical member, the flow path of the carrier gas is branched in a stepwise manner in the height direction.
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公开(公告)号：US20240355593A1
公开(公告)日：2024-10-24
申请号：US18136276
申请日：2023-04-18
发明人： Melvin Verbaas , Einosuke Tsuda
IPC分类号： H01J37/32 , C23C16/458 , C23C16/46 , C23C16/509 , C23C16/52 , H01L21/683
CPC分类号： H01J37/32715 , C23C16/4583 , C23C16/46 , C23C16/509 , C23C16/52 , H01J37/32568 , H01L21/6833 , H01J37/32082 , H01J2237/002 , H01J2237/2007
摘要： An electrostatic chuck (ESC) for holding a workpiece in a plasma processing chamber, where the ESC includes a monolithic insulating substrate with a top surface; a plurality of electrodes embedded in the insulating substrate, the plurality of electrodes being in a multipolar configuration to receive multiple DC bias signals from a first power supply circuit; and a radio frequency (RF) electrode embedded in the insulating substrate, the plurality of electrodes being located between the top surface and the RF electrode, the RF electrode including a contact node configured to be coupled to a second power supply circuit configured to generate an RF signal.
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公开(公告)号：US10950417B2
公开(公告)日：2021-03-16
申请号：US16004956
申请日：2018-06-11
IPC分类号： H01J37/32 , H01J37/20 , H01L21/02 , H01L21/311
摘要： A substrate processing apparatus includes a process container; a process gas supply mechanism; a substrate loading table; a temperature adjusting medium passage; a temperature adjusting medium extraction mechanism; a heater; and a temperature controller. The temperature controller is configured to adjust a temperature of a target substrate to a first temperature by allowing a temperature adjusting medium to flow through the temperature adjusting medium passage of the substrate loading table; and adjust the temperature of the target substrate to a second temperature higher than the first temperature by extracting the temperature adjusting medium of the temperature adjusting medium passage using the temperature adjusting medium extraction mechanism while heating the target substrate using the heater.
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4.发明申请公开(公告)号：US20180261464A1
公开(公告)日：2018-09-13
申请号：US15914071
申请日：2018-03-07
IPC分类号： H01L21/311 , H01L21/02 , H01L29/66 , H01L21/67 , H01L21/285 , H01L21/677 , H01L29/45
摘要： Disclosed is a method for removing, from a processing target substrate having an insulating film with a predetermined pattern formed thereon, a silicon-containing oxide film formed in a silicon portion of a bottom of the pattern. The method includes: removing the silicon-containing oxide film formed on the bottom of the pattern by ionic anisotropic plasma etching using plasma of a carbon-based gas; removing a remaining portion of the silicon-containing oxide film after the anisotropic plasma etching, by chemical etching; and removing a residue remaining after the chemical etching.
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公开(公告)号：US11281116B2
公开(公告)日：2022-03-22
申请号：US17204161
申请日：2021-03-17
发明人： Einosuke Tsuda , Daisuke Toriya , Satoshi Yonekura , Satoshi Takeda , Motoshi Fukudome , Kyoko Ikeda
摘要： The present invention provides a substrate stage and a substrate processing apparatus that appropriately control a temperature of a staging surface on which a substrate is placed. The substrate stage includes a stage base including a cooling surface therein, and a supply flow path forming member formed of a material having a lower thermal conductivity than that of the stage base and including cooling nozzles configured to spray a coolant toward the cooling surface.
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公开(公告)号：US09984892B2
公开(公告)日：2018-05-29
申请号：US15596060
申请日：2017-05-16
发明人： Takashi Kobayashi , Seishi Murakami , Takashi Sakuma , Masahiko Tomita , Takamichi Kikuchi , Akitaka Shimizu , Takayuki Kamaishi , Einosuke Tsuda
IPC分类号： H01L21/302 , H01L21/308 , H01L21/285 , H01L21/67
CPC分类号： H01L21/3081 , H01L21/28512 , H01L21/28518 , H01L21/28556 , H01L21/31116 , H01L21/67069 , H01L21/67207
摘要： Disclosed is a method for removing, from a target substrate having an insulating film with a predetermined pattern formed thereon, a silicon-containing oxide film formed in a silicon portion at a bottom of the pattern. The method includes: forming a carbon-based protective film on the entire surface of the insulating film including the pattern by ALD using a carbon source gas; selectively removing the carbon-based protective film on an upper surface of the insulating film and on the bottom of the pattern by an anisotropic plasma processing; removing the silicon-containing oxide film formed on the bottom of the pattern by etching; and removing a remaining portion of the carbon-based protective film.
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公开(公告)号：US12094753B2
公开(公告)日：2024-09-17
申请号：US17363401
申请日：2021-06-30
发明人： Melvin Verbaas , Einosuke Tsuda , Kentaro Asakura
IPC分类号： H01L21/687 , H01J37/32 , H05B3/22
CPC分类号： H01L21/68742 , H05B3/22 , H01J37/32724 , H01J2237/20235
摘要： A stage device includes: a stage having a pin hole provided therein and a placement surface on which a substrate is placed; and at least one lift pin configured to move up and down through the pin hole; and a lifter configured to raise and lower the at least one lift pin, wherein the stage includes a first heating part provided therein and configured to heat the stage, and the at least one lift pin includes a second heating part provided therein or therearound and configured to heat the at least one lift pin.
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公开(公告)号：US20170338120A1
公开(公告)日：2017-11-23
申请号：US15596060
申请日：2017-05-16
发明人： Takashi Kobayashi , Seishi Murakami , Takashi Sakuma , Masahiko Tomita , Takamichi Kikuchi , Akitaka Shimizu , Takayuki Kamaishi , Einosuke Tsuda
IPC分类号： H01L21/308 , H01L21/285 , H01L21/67
CPC分类号： H01L21/3081 , H01L21/28512 , H01L21/28518 , H01L21/28556 , H01L21/31116 , H01L21/67069 , H01L21/67207
摘要： Disclosed is a method for removing, from a target substrate having an insulating film with a predetermined pattern formed thereon, a silicon-containing oxide film formed in a silicon portion at a bottom of the pattern. The method includes: forming a carbon-based protective film on the entire surface of the insulating film including the pattern by ALD using a carbon source gas; selectively removing the carbon-based protective film on an upper surface of the insulating film and on the bottom of the pattern by an anisotropic plasma processing; removing the silicon-containing oxide film formed on the bottom of the pattern by etching; and removing a remaining portion of the carbon-based protective film.
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