- 专利标题: Active pattern structure and semiconductor device including the same
-
申请号: US15496145申请日: 2017-04-25
-
公开(公告)号: US09985025B1公开(公告)日: 2018-05-29
- 发明人: Ki-Il Kim , Seung-Jin Mun , Kwang-Yong Yang , Young-Mook Oh , Ah-Young Cheon , Seung-Mo Ha
- 申请人: Samsung Electronics Co., Ltd.
- 申请人地址: KR Gyeonggi-do
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Gyeonggi-do
- 代理机构: Harness, Dickey & Pierce, P.L.C.
- 优先权: KR10-2016-0157356 20161124
- 主分类号: H01L29/00
- IPC分类号: H01L29/00 ; H01L21/311 ; H01L27/088 ; H01L29/06 ; H01L29/10 ; H01L21/8234
摘要:
An active pattern structure may include a substrate including an active pattern array defined by a plurality of trenches including first to third trenches, and first to third isolation patterns in the first to third trenches, respectively. The active pattern array may include a plurality of first and second active patterns extending in a first direction, and the first to third trenches may be between the first and second active patterns and may include different widths from each other. The active pattern array may include an active pattern group including one of the first active patterns and one of the second active patterns sequentially arranged in a second direction substantially perpendicular to the first direction. Each of the first and second active patterns may have a minute width.
公开/授权文献
信息查询
IPC分类: