公开(公告)号：US10312153B2

公开(公告)日：2019-06-04

申请号：US15914125

申请日：2018-03-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyungin Choi ,  Ah-Young Cheon ,  Kwang-Yong Yang ,  Myungil Kang ,  Dohyoung Kim ,  YoonHae Kim

IPC: H01L29/66 ,  H01L21/265 ,  H01L27/092 ,  H01L29/165 ,  H01L21/8238

Abstract: Semiconductor devices are providing including a first isolation region configured to define a first fin active region protruding from a substrate, first gate patterns on the first fin active region, and a first epitaxial region in the first fin active region between the first gate patterns. Sidewalls of the first epitaxial region have first inflection points so that an upper width of the first epitaxial region is greater than a lower width of the first epitaxial region.

公开(公告)号：US09941174B2

公开(公告)日：2018-04-10

申请号：US15007711

申请日：2016-01-27

Applicant: Samsung Electronics Co., Ltd

Inventor： Kyungin Choi ,  Ah-Young Cheon ,  Kwang-Yong Yang ,  Myungil Kang ,  Dohyoung Kim ,  YoonHae Kim

IPC: H01L31/0312 ,  H01L21/8238 ,  H01L29/66 ,  H01L27/092 ,  H01L21/265 ,  H01L29/165

CPC classification number: H01L21/823814 ,  H01L21/26586 ,  H01L21/823821 ,  H01L27/0924 ,  H01L29/165 ,  H01L29/66545

Abstract: Semiconductor devices are providing including a first isolation region configured to define a first fin active region protruding from a substrate, first gate patterns on the first fin active region, and a first epitaxial region in the first fin active region between the first gate patterns. Sidewalls of the first epitaxial region have first inflection points so that an upper width of the first epitaxial region is greater than a lower width of the first epitaxial region.

公开(公告)号：US09985025B1

公开(公告)日：2018-05-29

申请号：US15496145

申请日：2017-04-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ki-Il Kim ,  Seung-Jin Mun ,  Kwang-Yong Yang ,  Young-Mook Oh ,  Ah-Young Cheon ,  Seung-Mo Ha

IPC: H01L29/00 ,  H01L21/311 ,  H01L27/088 ,  H01L29/06 ,  H01L29/10 ,  H01L21/8234

CPC classification number: H01L27/0886 ,  B82Y10/00 ,  H01L21/3086 ,  H01L21/762 ,  H01L21/823431 ,  H01L21/823481 ,  H01L29/045 ,  H01L29/0649 ,  H01L29/0673 ,  H01L29/1033 ,  H01L29/42392 ,  H01L29/775

Abstract: An active pattern structure may include a substrate including an active pattern array defined by a plurality of trenches including first to third trenches, and first to third isolation patterns in the first to third trenches, respectively. The active pattern array may include a plurality of first and second active patterns extending in a first direction, and the first to third trenches may be between the first and second active patterns and may include different widths from each other. The active pattern array may include an active pattern group including one of the first active patterns and one of the second active patterns sequentially arranged in a second direction substantially perpendicular to the first direction. Each of the first and second active patterns may have a minute width.