Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
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Application No.: US15244853Application Date: 2016-08-23
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Publication No.: US09985149B2Publication Date: 2018-05-29
- Inventor: Tatsuya Usami , Yoshiaki Yamamoto , Keiji Sakamoto , Tohru Mogami , Tsuyoshi Horikawa , Keizo Kinoshita
- Applicant: Renesas Electronics Corporation , Photonics Electronics Technology Research Association
- Applicant Address: JP Tokyo JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION,PHOTONICS ELECTRONICS TECHNOLOGY RESEARCH ASSOCIATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION,PHOTONICS ELECTRONICS TECHNOLOGY RESEARCH ASSOCIATION
- Current Assignee Address: JP Tokyo JP Tokyo
- Agency: McGinn IP Law Group, PLLC.
- Priority: JP2015-174295 20150904
- Main IPC: H01L31/0232
- IPC: H01L31/0232 ; H01L31/18 ; G02B6/12 ; G02B6/136 ; G02B6/122
Abstract:
A performance of a semiconductor device is improved. In a method of manufacturing a semiconductor device, a first semiconductor portion and a second semiconductor portion made of silicon are formed on a base body via an insulation layer, and a third semiconductor portion including a semiconductor layer made of germanium is formed on the second semiconductor portion. Next, an insulation film is formed above the first semiconductor portion, an opening portion reaching the first semiconductor portion from an upper surface of the insulation film is formed, and a metal silicide layer is formed on a part of an upper surface of the first semiconductor portion exposed to the opening portion.
Public/Granted literature
- US20170069769A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2017-03-09
Information query
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