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公开(公告)号：US10162110B2
公开(公告)日：2018-12-25
申请号：US15243718
申请日：2016-08-22
发明人： Tatsuya Usami , Keiji Sakamoto , Yoshiaki Yamamoto , Shinichi Watanuki , Masaru Wakabayashi , Tohru Mogami , Tsuyoshi Horikawa , Keizo Kinoshita
摘要： A semiconductor device is provided with an insulating layer formed on a base substrate, an optical waveguide composed of a semiconductor layer formed on the insulating layer, and an insulating film formed along an upper surface of the insulating layer and a front surface of the optical waveguide. A peripheral edge portion of a lower surface of the optical waveguide is separated from the insulating layer, and the insulating film is buried between the peripheral edge portion and the insulating layer.
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公开(公告)号：US10078182B2
公开(公告)日：2018-09-18
申请号：US15243746
申请日：2016-08-22
发明人： Shinichi Watanuki , Akira Mitsuiki , Atsuro Inada , Tohru Mogami , Tsuyoshi Horikawa , Keizo Kinoshita
CPC分类号： G02B6/136 , G02B6/12004 , G02B6/122 , G02B2006/12061 , G02B2006/12097 , G02F1/025 , G02F2201/063 , G02F2201/066 , G02F2202/105
摘要： When an optical waveguide is formed, an area of an opening of a resist mask is equal to an area of a semiconductor layer for a dummy pattern exposed from the resist mask, and the semiconductor layer for the dummy pattern exposed from the resist mask has a uniform thickness in a region in which the dummy pattern is formed. As a result, an effective pattern density does not change in etching the semiconductor layer for the dummy pattern, and accordingly, it is possible to form a rib-shaped optical waveguide having desired dimensions and a desired shape.
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公开(公告)号：US09985149B2
公开(公告)日：2018-05-29
申请号：US15244853
申请日：2016-08-23
发明人： Tatsuya Usami , Yoshiaki Yamamoto , Keiji Sakamoto , Tohru Mogami , Tsuyoshi Horikawa , Keizo Kinoshita
IPC分类号： H01L31/0232 , H01L31/18 , G02B6/12 , G02B6/136 , G02B6/122
CPC分类号： H01L31/02327 , G02B6/12004 , G02B6/122 , G02B6/136 , G02B2006/12061 , G02B2006/12123 , H01L31/1808
摘要： A performance of a semiconductor device is improved. In a method of manufacturing a semiconductor device, a first semiconductor portion and a second semiconductor portion made of silicon are formed on a base body via an insulation layer, and a third semiconductor portion including a semiconductor layer made of germanium is formed on the second semiconductor portion. Next, an insulation film is formed above the first semiconductor portion, an opening portion reaching the first semiconductor portion from an upper surface of the insulation film is formed, and a metal silicide layer is formed on a part of an upper surface of the first semiconductor portion exposed to the opening portion.
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4.发明授权Method of manufacturing an optical device having a stepwise or tapered light input/output part 有权具有逐步或锥形光输入/输出部分的光学装置的制造方法公开(公告)号：US09335475B2
公开(公告)日：2016-05-10
申请号：US14482616
申请日：2014-09-10
申请人： Oki Electric Industry Co., Ltd. , National Institute of Advanced Industrial Science and Technology , Photonics Electronics Technology Research Association
发明人： Hideki Ono , Tsuyoshi Horikawa , Naoki Hirayama
CPC分类号： G02B6/1228 , G02B6/12002 , G02B6/124 , G02B6/126 , G02B6/136 , G02B6/305 , G02B6/34 , G02B2006/12061 , G02B2006/12147
摘要： In a method of manufacturing an optical device including an optical waveguide having a core, a cladding and a light input/output part through which a light beam is input or output, a substrate is prepared which is provided with a uniform thickness of single-crystalline film having its constituent atoms forming a diamond lattice structure and its surface being neither the (111) plane nor its equivalent planes. In the single-crystalline film, a precursor structure is formed which has a precursor of light input/output part. A mask is formed such as to expose the precursor with the remaining part covered. The structure is immersed into an alkaline solution for wet etching with the (111) planes used as etch-stop planes.
摘要翻译： 在制造包括光纤的光学器件的方法中，该光学器件具有芯，输入或输出光束的包层和光输入/输出部分，制备具有均匀厚度的单晶 其构成原子形成金刚石晶格结构的膜，其表面既不是（111）面也不是其等效平面。 在单晶膜中，形成具有光输入/输出部分的前体的前体结构。 形成掩模，以使剩余部分被覆盖的前体曝光。 将该结构浸入用作用作蚀刻停止平面的（111）面的湿法蚀刻的碱性溶液中。
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公开(公告)号：US10340399B2
公开(公告)日：2019-07-02
申请号：US15748994
申请日：2016-07-28
IPC分类号： H01L31/028 , H01L31/036 , H01L31/102 , H01L31/105 , H01L31/109 , H01L31/0232
摘要： Provided is an optical device in which an Si cap layer is provided on a Ge layer, and which is capable of effectively reducing dark current, while having a good effect on prevention of production line contamination by Ge. One embodiment of the optical device according to the present invention is provided with: a semiconductor layer which contains Ge and has a (001) surface and a facet surface between the (001) surface and a (110) surface; and a cap layer which is formed from Si, and which is formed on the (001) surface and the facet surface of the semiconductor layer. The ratio of the film thickness of the cap layer on the facet surface to the film thickness of the cap layer on the (001) surface is 0.4 or more; and the film thickness of the cap layer on the (001) surface is from 9 nm to 30 nm (inclusive).
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公开(公告)号：US10247882B2
公开(公告)日：2019-04-02
申请号：US15692062
申请日：2017-08-31
发明人： Tsuyoshi Horikawa , Tohru Mogami , Keizo Kinoshita
摘要： Provided is an optical waveguide circuit avoiding the difficulty of the property compensation based on temperature control, compensated with respect to the property variations due to fabrication error, particularly paid attention in a silicon waveguide, and being low in power consumption and high in performances. The optical waveguide circuit includes a silicon (Si) substrate, a buried oxide film (BOX) layer formed on the Si substrate, and an SOI (Silicon on Insulator) layer, formed on the BOX layer, including an optical element utilizing the SOI layer as a main optical transmission medium. At least part of a waveguide of the optical element includes uniformly distributed and thermally unstable crystal defects.
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公开(公告)号：US09869815B2
公开(公告)日：2018-01-16
申请号：US15093833
申请日：2016-04-08
申请人： Oki Electric Industry Co., Ltd. , National Institute Of Advanced Industrial Science And Technology , Photonics Electronics Technology Research Association
发明人： Hideki Ono , Tsuyoshi Horikawa , Naoki Hirayama
CPC分类号： G02B6/1228 , G02B6/12002 , G02B6/124 , G02B6/126 , G02B6/136 , G02B6/305 , G02B6/34 , G02B2006/12061 , G02B2006/12147
摘要： An optical device includes an optical waveguide provided on a principal surface of a substrate. The optical waveguide includes a core and a cladding provided around the core. The cladding is configured by a substance having a refractive index smaller than 71.4% of the refractive index of the core. The core has constituent atoms substantially forming a diamond lattice structure. The optical waveguide has a light input/output part through which a light beam is input and/or output. The light input/output part decreases stepwise in thickness towards an output end while tapering down in its width. The core is provided in the light input/output part to have a (111) plane or an equivalent plane to the (111) plane exposed on a face of a riser of the stepwise thickness of the light input/output part.
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公开(公告)号：US20190006532A1
公开(公告)日：2019-01-03
申请号：US15748994
申请日：2016-07-28
IPC分类号： H01L31/028 , H01L31/036 , H01L31/105 , H01L31/109 , H01L31/0232
CPC分类号： H01L31/028 , H01L31/02327 , H01L31/036 , H01L31/105 , H01L31/1055 , H01L31/1085 , H01L31/109
摘要： Provided is an optical device in which an Si cap layer is provided on a Ge layer, and which is capable of effectively reducing dark current, while having a good effect on prevention of production line contamination by Ge. One embodiment of the optical device according to the present invention is provided with: a semiconductor layer which contains Ge and has a (001) surface and a facet surface between the (001) surface and a (110) surface; and a cap layer which is formed from Si, and which is formed on the (001) surface and the facet surface of the semiconductor layer. The ratio of the film thickness of the cap layer on the facet surface to the film thickness of the cap layer on the (001) surface is 0.4 or more; and the film thickness of the cap layer on the (001) surface is from 9 nm to 30 nm (inclusive).
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